Evaluation of minority-carrier diffusion length in n-type ß-Fe Si2 single crystals by electron-beam-induced current

Applied Physics Letters

Volumn 92, Issue 4, 2008, Pages

  Ootsuka, Teruhisa ^a   Suemasu, Takashi ^a   Chen, Jun ^b   Sekiguchi, Takashi ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; DIFFUSION; ELECTRIC CURRENT CONTROL; ELECTRON BEAMS; SEMICONDUCTING SILICON COMPOUNDS;

CHEMICAL VAPOR TRANSPORT; EDGE-SCAN CONFIGURATION; MINORITY CARRIERS (HOLES); TEMPERATURE ANNEALING;

SINGLE CRYSTALS;

EID: 38849162387     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2835904     Document Type: Article

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