Photoresponse properties of polycrystalline BaSi2 films grown on SiO2 substrates using (111)-oriented Si layers by an aluminum-induced crystallization method

Applied Physics Express

Volumn 2, Issue 5, 2009, Pages

  Tsukada, Dai ^a   Matsumoto, Yuta ^a   Sasaki, Ryo ^a   Takeishi, Michitoshi ^a   Saito, Takanobu ^a   Usami, Noritaka ^b   Suemasu, Takashi ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; ALUMINUM-INDUCED CRYSTALLIZATION; EXTERNAL QUANTUM EFFICIENCY; PHOTON ENERGY; PHOTORESPONSE; PHOTORESPONSIVITY; POLYCRYSTALLINE; POLYCRYSTALLINE-SI; SI (1 1 1); SI LAYER;

ALUMINA; ALUMINUM; BIAS VOLTAGE; CRYSTAL GROWTH; CRYSTALLIZATION; EPITAXIAL FILMS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHOTONS; POLYSILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 66949112472     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.051601     Document Type: Article

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