Band diagrams of BaSi2/Si structure by Kelvin probe and current-voltage characteristics

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 20-23, 2006, Pages

  Suemasu, Takashi ^a   Morita, Kousuke ^a   Kobayashi, Michitaka ^a   Saida, Morihiko ^a   Sasaki, Masahiro ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

BaSi2; Kelvin probe; MBE; Work function

Indexed keywords

BARIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH;

BASI2; ELECTRON AFFINITY; KELVIN PROBE; WORK FUNCTION;

HETEROJUNCTIONS;

EID: 33745307567     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L519     Document Type: Article

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