Epitaxial growth of semiconducting BaSi2 thin films on Si(111) substrates by reactive deposition epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 A, 2004, Pages 4155-4156

  Inomata, Yuya ^a   Nakamura, Tomoyuki ^a   Suemasu, Takashi ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

BaSi2; Epitaxy; RDE; Semiconducting suilicide

Indexed keywords

ABSORPTION; BARIUM COMPOUNDS; DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR MATERIALS; SILICON; SOLAR CELLS; X RAY DIFFRACTION ANALYSIS;

BAND GAP SEMICONDUCTORS; QUARTZ CRYSTAL; REACTIVE DEPOSITION EPITAXY (RDE); SEMICONDUCTING SILICIDE;

THIN FILMS;

EID: 4644297814     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4155     Document Type: Article

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