Epitaxial growth of semiconducting BaSi2 films on Si(111) substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 4 A, 2004, Pages

  Inomata, Yuya ^a   Nakamura, Tomoyuki ^a   Suemasu, Takashi ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

BaSi2; Molecular beam epitaxy (MBE); Reactive deposition epitaxy (RDE)

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DEPOSITION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

BASI2; FULL WIDTH AT HALF MAXIMUM (FWHM); MULTIDOMAIN EPILAYERS; REACTIVE DEPOSITION EPITAXY (RDE);

BARIUM COMPOUNDS;

EID: 2942592701     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l478     Document Type: Article

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