Fabrication of (1 1 1)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3581-3586

  Tsukada, Dai ^a   Matsumoto, Yuta ^a   Sasaki, Ryo ^a   Takeishi, Michitoshi ^a   Saito, Takanobu ^a   Usami, Noritaka ^b   Suemasu, Takashi ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Barium compounds; B2. Semiconductor silicon compounds

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; ALUMINUM-INDUCED CRYSTALLIZATION; B1. BARIUM COMPOUNDS; B2. SEMICONDUCTOR SILICON COMPOUNDS; DEPOSITION TECHNIQUE; ELECTRON BACK SCATTER DIFFRACTION; EXPOSURE-TIME; EXTERNAL QUANTUM EFFICIENCY; GROWTH CONDITIONS; PHOTON ENERGY; PHOTORESPONSE; PHOTOVOLTAIC APPLICATIONS; ROOM TEMPERATURE; SI LAYER; STACKED LAYER; XRD;

ALUMINA; ALUMINUM; AMORPHOUS SILICON; BARIUM; BARIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRON DIFFRACTION; FUSED SILICA; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SILICA; SILICON; SILICON OXIDES; SUBSTRATES; VACUUM DEPOSITION; VACUUM EVAPORATION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649841837     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.039     Document Type: Article

References (24)

1. Sze S.M. Physics of Semiconductor Devices (1981), Wiley, New York
2. Morita K., Inomata Y., and Suemasu T. Thin Solid Films 508 (2006) 363
3. Migas D.B., Shaposhnikov V.L., and Borisenko V.E. Phys. Status Solidi B 244 (2007) 2611
4. Morita K., Inomata Y., and Suemasu T. Jpn. J. Appl. Phys. 45 (2006) L390
5. Nast O., Puzzer T., Koschier L.M., Sproul A.B., and Wenham S.R. Appl. Phys. Lett. 73 (1998) 3214
6. Gall S., Muske M., Sieber I., Nast O., and Fuhs W. J. Non-Cryst. Solids 299 (2002) 741
7. Kim H., Kim D., Lee G., Kim D., and Lee S.H. Sol. Energy Mater. Sol. Cells 74 (2002) 323
8. Haque M., Naseem H., and Brown W. J. Appl. Phys. 75 (1994) 3928
9. Knaepen W., Detavernier C., Van Meirhaeghe R.L., Sweet J.J., and Lavoie C. Thin Solid Films 516 (2008) 4946
10. Sugimoto Y., Takata N., Hirota T., Ikeda K., Yoshida F., Nakashima H., and Nakashima H. Jpn. J. Appl. Phys. 44 (2005) 4770
11. McKee R.A., Walker F.J., Conner J.R., and Raj R. Appl. Phys. Lett. 63 (1993) 2818
12. Inomata Y., Nakamura T., Suemasu T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) L478
13. Inomata Y., Suemasu T., Izawa T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) L771
14. Inomata Y., Nakamura T., Suemasu T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) 4155
15. Kobayashi M., Matsumoto Y., Ichikawa Y., Tsukada D., and Suemasu T. Appl. Phys. Express 1 (2008) 051403
16. Ekanayake G., Quinn T., Reehal H.S., Rau B., and Gall S. J. Cryst. Growth 299 (2007) 309
17. Straub A., Inns D., Terry M.L., Huang Y., Widenborg P.I., and Aberle A.G. Thin Solid Films 511-512 (2006) 41
18. Kuraseko H., Orita N., Koaizawa H., and Kondo M. Appl. Phys. Express 2 (2009) 015501
19. Matsumoto Y., Tsukada D., Sasaki R., Takeishi M., and Suemasu T. Appl. Phys. Express 2 (2009) 021101
20. Bell A.T. J. Vac. Sci. & Technol. 16 (1979) 418
21. Nast O., and Hartmann A.J. J. Appl. Phys. 88 (2000) 124
22. Nast O., and Hartmann A.J. J. Appl. Phys. 88 (2000) 716
23. Widenborg P.I., and Aberle A.G. J. Cryst. Growth 242 (2002) 270
24. Sieber I., Schneider R., Doerfel I., Schubert-Bischoff P., Gall S., and Fuhs W. Thin Solid Films 427 (2003) 298