Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy

Thin Solid Films

Volumn 515, Issue 22, 2007, Pages 8242-8245

  Kobayashi, M ^a   Morita, K ^a   Suemasu, T ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

BaSi2; Molecular beam epitaxy

Indexed keywords

BARIUM COMPOUNDS; CONCENTRATION (PROCESS); ELECTRONS; FILM GROWTH; SEMICONDUCTING FILMS;

ELECTRON CONCENTRATION; GA TEMPERATURE;

MOLECULAR BEAM EPITAXY;

EID: 34547766990     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.02.050     Document Type: Article

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