Photoresponse properties of Aln-Β-Fe Si2 Schottky diodes using Β-Fe Si2 single crystals

Applied Physics Letters

Volumn 91, Issue 14, 2007, Pages

  Ootsuka, Teruhisa ^a,b,d   Fudamoto, Yasunori ^a   Osamura, Masato ^c   Suemasu, Takashi ^b   Makita, Yunosuke ^b   Fukuzawa, Yasuhiro ^b   Nakayama, Yasuhiko ^b  

^a Tateyama Kagaku Industry Co Ltd   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c Osamura sigyo   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-TEMPERATURE ANNEALING; PHOTOEXCITED ELECTRONS; PHOTORESPONSE PROPERTIES;

PHOTOCURRENTS; PHOTOEXCITATION; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SINGLE CRYSTALS;

SCHOTTKY BARRIER DIODES;

EID: 34948870503     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2789706     Document Type: Article

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