Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 363-366

  Morita, K ^a   Inomata, Y ^a   Suemasu, T ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

BaSi2; Mobility; Molecular beam epitaxy; Optical absorption

Indexed keywords

BARIUM COMPOUNDS; CARRIER CONCENTRATION; FILM GROWTH; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; POLYSILICON;

ABSORPTION EDGE; BASI2; CONDUCTION BAND; MOBILITY;

THIN FILMS;

EID: 33646079401     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.344     Document Type: Article

References (13)

1. Nakamura T., Suemasu T., Takakura K., and Hasegawa F. Appl. Phys. Lett. 81 (2002) 1032
2. Ojima K., Yoshimura M., and Ueda K. Jpn. J. Appl. Phys. 41 (2002) 4965
3. A. Wakahara, Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Japan, private communication.
4. Mackee R.A., Walker F.J., Conner J.R., and Raj R. Appl. Phys. Lett. 63 (1993) 2818
5. Weitering H. Surf. Sci. 355 (1996) L271
6. Inomata Y., Nakamura T., Suemasu T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) 4155
7. Inomata Y., Suemasu T., Izawa T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) L771
8. Imai M., and Hirano T. J. Alloys Compd. 224 (1995) 111
9. Imai M., and Hirano T. Phys. Rev., B 58 (1998) 11922
10. Inomata Y., Nakamura T., Suemasu T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) L478
11. Miyata Y., Furuta M., Yoshioka T., and Kawamura T. J. Appl. Phys. 73 (1993) 3271
12. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), Wiley, New York
13. Umirzakov B.E., Tashmukhamedova D.A., Boltaev E.U., and Dzhurakhalov A.A. Mater. Sci. Eng., B, Solid-State Mater. Adv. Technol. 101 (2003) 124