Doping of β-FeSi2 films with boron and arsenic by sputtering and its application for optoelectronic devices

Optical Materials

Volumn 27, Issue 5, 2005, Pages 942-947

  Liu, Zhengxin ^a   Osamura, Masato ^a   Ootsuka, Teruhisa ^a   Wang, Shinan ^b   Fukuzawa, Yasuhiro ^a   Suzuki, Yasuhito ^a   Kuroda, Ryo ^b   Mise, Takahiro ^a   Otogawa, Naotaka ^b   Nakayama, Yasuhiko ^b   Tanoue, Hisao ^b   Makita, Yunosuke ^b,c  

^a System Engineers' Co Ltd   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Tateyama Kagaku Ind Co Ltd   (Japan)

Author keywords

Arsenic; Boron; Doping; Iron silicide; Optoelectronic device; p n homojunction; FeSi2

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ARSENIC; BORON; HALL EFFECT; IRON COMPOUNDS; MICROSTRUCTURE; OPTOELECTRONIC DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SPUTTERING;

DOPING; IRON SILICIDE; P/N HOMOJUNCTIONS; Β-FESI2;

THIN FILMS;

EID: 13544266302     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.08.040     Document Type: Conference Paper

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