Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(1 1 1) substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1250-1255

  Suemasu, Takashi ^a,b   Sasase, Masato ^c   Ichikawa, Yoshitake ^a   Kobayashi, Michitaka ^a   Tsukada, Dai ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Barium compounds; B2. Semiconductor silicon compounds

Indexed keywords

BARIUM COMPOUNDS; CRYSTAL STRUCTURE; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON DIFFRACTION PATTERNS; ROOM TEMPERATURE; SEMICONDUCTOR SILICON COMPOUNDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 39649103851     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.044     Document Type: Article

References (25)

1. Leong D., Harry M., Reeson K.J., and Homewood K.P. Nature 387 (1997) 686
2. Suemasu T., Negishi Y., Takakura K., and Hasegawa F. Jpn. J. Appl. Phys. 39 (2000) L1013
3. Suemasu T., Negishi Y., Takakura K., and Hasegawa F. Appl. Phys. Lett. 79 (2001) 1804
4. Ootsuka T., Fudamoto Y., Osamura M., Suemasu T., Makita Y., Nakayama Y., and Fukuzawa Y. Appl. Phys. Lett. 91 (2007) 142114
5. Morita K., Inomata Y., and Suemasu T. Thin Solid Films 508 (2006) 363
6. Migas D.B., Shaposhnikov V.L., and Borisenko V.E. Phys. Stat. Sol. (b) 244 (2007) 2611
7. Ojima K., Yoshimura M., and Ueda K. Jpn. J. Appl. Phys. 41 (2002) 4965
8. Morita K., Inomata Y., and Suemasu T. Jpn. J. Appl. Phys. 45 (2006) L390
9. Morita K., Kobayashi M., and Suemasu T. Thin Solid Films 515 (2007) 8216
10. Suemasu T., Morita K., and Kobayashi M. J. Crystal Growth 301-302 (2007) 680
11. Imai Y., and Watanabe A. Thin Solid Films 515 (2007) 8219
12. Schäfer H., Janzon K.H., and Weiss A. Angew. Chem. Int. Ed. Engl. 2 (1963) 393
13. Evers J., Oehlinger G., and Weiss A. Angew. Chem. Int. Ed. Engl. 16 (1977) 659
14. Imai M., Hirano T., Kikegawa T., and Shimomura O. Phys. Rev. B 55 (1997) 132
15. Suemasu T., Morita K., Kobayashi M., Saida M., and Sasaki M. Jpn. J. Appl. Phys. 45 (2006) L519
16. Pirri C., Peruchetti J.C., Bolmont D., and Gewinner G. Phys. Rev. B 33 (1986) 4108
17. Nakamura T., Suemasu T., Takakura K., and Hasegawa F. Appl. Phys. Lett. 81 (2002) 1032
18. Sze S.M. Physics of Semiconductor Devices (1981), Wiley, New York (p.822)
19. Inomata Y., Nakamura T., Suemasu T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) 4155
20. Inomata Y., Suemasu T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) L478
21. Inomata Y., Suemasu T., Izawa T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) L771
22. Kobayashi M., Morita K., and Suemasu T. Thin Solid Films 515 (2007) 8242
23. Tung R.T., Batstone J.L., and Yalisove S.M. J. Electrochem. Soc. 136 (1989) 815
24. Miyao M., Nakagawa K., Nakamura N., and Ohshima T. J. Crystal Growth 111 (1991) 957
25. Mackee R.A., Walker F.J., Conner J.R., and Raj R. Appl. Phys. Lett. 63 (1993) 2818