Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1-xSrxSi2 for photovoltaic application

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 680-683

  Suemasu, T ^a   Morita, K ^a   Kobayashi, M ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Optical absorption; A3. MBE; B1. Semiconducting silicides; B2. BaSi2; B3. Solar cell

Indexed keywords

BARIUM COMPOUNDS; ENERGY GAP; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SILICON COMPOUNDS; SOLAR CELLS;

BASI2; PHONON ENERGY; SEMICONDUCTING SILICIDES; THERMODYNAMIC MODELS;

TERNARY ALLOYS;

EID: 33947301935     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.236     Document Type: Article

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