Optical absorption edge of ternary semiconducting silicide Ba 1-xSrxSi2

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 12-16, 2006, Pages

  Morita, Kousuke ^a   Kobayashi, Michitaka ^a   Suemasu, Takashi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

BaSi2; Optical absorption; Semiconducting suicide

Indexed keywords

BAND STRUCTURE; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SILICA; SUBSTRATES;

BAND GAP; BASI2; OPTICAL ABSORPTION SPECTRA; SEMICONDUCTING SUICIDE;

SEMICONDUCTOR MATERIALS;

EID: 33646481384     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L390     Document Type: Article

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