Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

Journal of Applied Physics

Volumn 107, Issue 7, 2010, Pages

  Leung, K K ^a   Fong, W K ^a   Chan, P K L ^a   Surya, C ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; DC CURRENT STRESS; DEFECT GENERATION; DEVICE RELIABILITY; DISLOCATION DENSITIES; EXPERIMENTAL DATA; FABRICATION PROCEDURE; GAN LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES; GAN/INGAN; GROWTH CONDITIONS; HIGH-CURRENT STRESSING; HIGHLY STRAINED; HOT SPOT; HOT-ELECTRON DEGRADATIONS; I-V MEASUREMENTS; INGAN QUANTUM WELLS; LOW-FREQUENCY NOISE; MULTIPLE QUANTUM WELLS; NONUNIFORMITY; OPTOELECTRONIC PROPERTIES; PHYSICAL MECHANISM; SPIRAL GROWTH; STEP-FLOW GROWTH; STRESS TIME; THERMAL IMAGING; TRAP ASSISTED TUNNELING; TRIETHYL GALLIUMS; TRIMETHYLINDIUM;

ATOMIC FORCE MICROSCOPY; DEFECT DENSITY; DEFECTS; DEGRADATION; GALLIUM ALLOYS; GALLIUM NITRIDE; INFRARED IMAGING; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77951525224     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3357312     Document Type: Article

References (30)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 0003-6951 64, 1687 (1994). 10.1063/1.111832
2. T. Kuroda and A. Tackeuchi, J. Appl. Phys. 0021-8979 92, 3071 (2002). 10.1063/1.1502186 (Pubitemid 35209235)
3. S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys., Part 1 0021-4922 30, L 1998 (1991). 10.1143/JJAP.30.L1998
4. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2 0021-4922, 35 (1B), L 74 (1996). 10.1143/JJAP.35.L74
5. F. I. Lai, S. C. Ling, C. E. Hsieh, T. H. Hsueh, H. C. Kuo, and T. C. Lu, IEEE Electron Device Lett. 0741-3106 30, 496 (2009). 10.1109/LED.2009.2016766
6. X. A. Cao and S. D. Arthur, Appl. Phys. Lett. 0003-6951 85, 3971 (2004). 10.1063/1.1810631
7. S. Levada, M. Meneghini, G. Meneghesso, and E. Zanoni, IEEE Trans. Device Mater. Reliab. 1530-4388 5, 688 (2005). 10.1109/TDMR.2005.860817 (Pubitemid 43119865)
8. D. L. Barton, M. Osinski, C. J. Helms, N. H. Berg, and B. S. Phillips, Proc. SPIE-Int. Soc. Opt. Eng. (USA) 2693, 64 (1996).
9. X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, IEEE Electron Device Lett. 0741-3106 23, 535 (2002). 10.1109/LED.2002.802601 (Pubitemid 35022947)
10. S. Keller, S. F. Chichibu, M. S. Minsky, E. Hu, U. K. Mishra, and S. P. DenBaars, J. Cryst. Growth 0022-0248 195, 258 (1998). 10.1016/S0022-0248(98) 00680-0
11. F. Scholtz, J. Off, A. Kniest, L. Görgens, and O. Ambacher, Mater. Sci. Eng., B 0921-5107 59, 268 (1999). 10.1016/S0921-5107(98)00338-9
12. M. Meneghini, S. Podda, A. Morelli, R. Pintus, L. Trevisanello, G. Meneghesso, M. Vanzi, and E. Zanoni, Microelectron. Reliab. 0026-2714 46, 1720 (2006). 10.1016/j.microrel.2006.07.050 (Pubitemid 44278088)
13. L. C. Chen and Y. L. Huang, Solid-State Electron. 0038-1101 48, 1239 (2004). 10.1016/j.sse.2004.02.003
14. S. Bychikhin, L. K. J. Vandamme, J. Kuzmik, G. Meneghesso, and D. Pogany, ASDAM Conference Proceedings, The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, 2004
15. M. Sampietro, G. Ferrari, D. Natali, U. Scherf, K. O. Annan, F. P. Wenzl, and G. Leising, Appl. Phys. Lett. 0003-6951 78, 3262 (2001). 10.1063/1.1374516
16. D. Ursutiu and B. K. Jones, Semicond. Sci. Technol. 0268-1242 11, 1133 (1996). 10.1088/0268-1242/11/8/002
17. T. Mukai, S. Nagahama, M. Sano, T. Yanamoto, D. Morita, T. Mitani, Y. Narukawa, S. Yamamoto, I. Niki, M. Yamada, S. Sonobe, S. Shioji, K. Deguchi, T. Naitou, H. Tamaki, Y. Murazaki, and M. Kameshima, Phys. Status Solidi A 200, 52 (2003). 10.1002/pssa.200303326
18. S. Leu, H. Protzmann, F. Höhnsdorf, W. Stolz, J. Steinkirchner, and E. Hufgard, J. Cryst. Growth 0022-0248 195, 91 (1998). 10.1016/S0022-0248(98) 00592-2
19. C. J. Deatcher, C. Liu, M. G. Cheong, L. M. Smith, S. Rushworth, A. Widdowson, and I. M. Watson, Chem. Vap. Deposition 0948-1907 10, 187 (2004). 10.1002/cvde.200304171
20. W. K. Fong, K. K. Leung, and C. Surya, J. Cryst. Growth 0022-0248 298, 239 (2007). 10.1016/j.jcrysgro.2006.10.024 (Pubitemid 46149668)
21. S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Haller, Z. -F. Fan, S. N. Mohammad, W. Kim, A. E. Botchkarev, and H. Morko̧, Appl. Phys. Lett. 0003-6951 69, 1556 (1996). 10.1063/1.117060
22. B. P. Luther, S. E. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Yang, MRS Symposia Proceedings No. 449 (Materials Research Society, Pittsburgh, 1997), p. 1097.
23. R. Wenzel, G. G. Fischer, and R. Schmid-Fetzer, Mater. Sci. Semicond. Process. 1369-8001 4, 357 (2001). 10.1016/S1369-8001(00)00177-3 (Pubitemid 32471339)
24. R. Wenzel, G. G. Fischer, and R. Schmid-Fetzer, Mater. Sci. Semicond. Process. 1369-8001 4, 367 (2001). 10.1016/S1369-8001(00)00178-5 (Pubitemid 32471340)
25. M. Yoshikawa, M. Murakami, H. Ishida, and H. Harima, Appl. Phys. Lett. 0003-6951 94, 131908 (2009). 10.1063/1.3104850
26. C. Sasaoka, H. Sunakawa, A. Kimura, M. Nido, A. Usui, and A. Sakai, J. Cryst. Growth 0022-0248 189-190, 61 (1998). 10.1016/S0022-0248(98)00169-9
27. C. Surya, S. H. Ng, E. R. Brown, and P. A. Maki, IEEE Trans. Electron Devices 0018-9383 41, 2016 (1994). 10.1109/16.333819
28. M. S. Keshner, Proc. IEEE 70 (3), 212 (1982). 10.1109/PROC.1982.12282
29. G. Tessier, M. L. Polignano, S. Pavageau, C. Filloy, D. Fournier, F. Cerutti, and I. Mica, J. Phys. D 0022-3727 39, 4159 (2006). 10.1088/0022-3727/ 39/19/007 (Pubitemid 44418780)
30. Z. Zhang, Annu. Rev. Heat Transfer 1049-0787 11, 351 (2000).