Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 91-97

  Leu, S ^a,c   Protzmann, H ^a   Hohnsdorf F ^a   Stolz, W ^a   Steinkirchner, J ^b   Hufgard, E ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b SIEMENS AG   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

Ditertiarybutyl silane; GaAs Hall sensor device; III V semiconductors; Metalorganic vapour phase epitaxy; Si doping

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC RESISTANCE; METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL PRESSURE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SENSORS;

DITERTIARYBUTYLSILANES; HALL SENSOR DEVICE; TERTIARYBUTYLARSINE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032477146     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00592-2     Document Type: Article

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