Extraction efficiency enhancement of GaN-based light-emitting diodes by microhole array and roughened surface oxide

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 496-498

  Lai, Fang I ^a   Ling, S C ^b   Hsieh, C E ^b   Hsueh, T H ^c   Kuo, Hao Chung ^b   Lu, Tien Chang ^b  

^a YUAN ZE UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Extraction efficiency; GaN; Light emitting diode (LED); Photoelectrochemical (PEC)

Indexed keywords

ARRAY PATTERNS; EXTRACTION EFFICIENCIES; EXTRACTION EFFICIENCY; FORWARD CURRENTS; GAN; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; LIGHT-EMITTING DIODE (LED); LIGHT-EXTRACTION EFFICIENCY; MICRO HOLES; OUTPUT POWER; OXIDE SURFACE; PHOTOELECTROCHEMICAL; PHOTOELECTROCHEMICAL (PEC); ROUGHENED SURFACES;

CURRENT DENSITY; DIODES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM;

LIGHT EMITTING DIODES;

EID: 67349229387     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2016766     Document Type: Article

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