Influence of strain and buffer layer type on In incorporation during GaInN MOVPE

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 268-273

  Scholz, F ^a   Off, J ^a   Kniest, A ^a   Gorgens L ^b   Ambacher, O ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL DEFECTS; ENERGY GAP; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; STRAIN; X RAY DIFFRACTION;

BUFFER LAYERS; GALLIUM INDIUM NITRIDE; GALLIUM NITRIDE;

NITRIDES;

EID: 0033528930     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00338-9     Document Type: Article

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