Silicon doping of gallium nitride using ditertiarybutylsilane

Chemical Vapor Deposition

Volumn 10, Issue 4, 2004, Pages 187-190

  Deatcher, Christopher J ^a   Liu, Chaowang ^a   Cheong, Myung Goo ^a   Smith, Lesley M ^b   Rushworth, Simon ^b   Widdowson, Anna ^c,d   Watson, Ian M ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b Epichem Ltd   (United Kingdom)

^c Oxford Industrial Park   (United Kingdom)

^d Accent Optical Technologies   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BUBBLES (IN FLUIDS); HALL EFFECT; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MIXTURES; OPTOELECTRONIC DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICON WAFERS; TERNARY SYSTEMS; X RAY DIFFRACTION ANALYSIS;

DONOR IMPURITY; SILICON DOPING; WAVELENGTHS;

GALLIUM NITRIDE;

EID: 6344244650     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200304171     Document Type: Review

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