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Volumn 5, Issue 4, 2005, Pages 688-693

Analysis of DC current accelerated life tests of GaN LEDs using a weibull-based statistical model

Author keywords

Gallium compounds; Light emitting diodes; Reliability estimation; Stress; Weibull distributions

Indexed keywords

DC CURRENTS; RELIABILITY ESTIMATION;

EID: 31044444581     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.860817     Document Type: Article
Times cited : (37)

References (7)
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    • (1997) Microelectmn. Reliab. , vol.37 , Issue.8 , pp. 1239-1241
    • Yanagisawa, T.1
  • 2
    • 0038062406 scopus 로고    scopus 로고
    • The degradation of GaAlAs red light-emitting diodes under continuous and low-speed pulse operations
    • Oct.
    • _, "The degradation of GaAlAs red light-emitting diodes under continuous and low-speed pulse operations," Microelectron. Reliab., vol. 38, no. 10, pp. 1627-1630, Oct. 1998.
    • (1998) Microelectron. Reliab. , vol.38 , Issue.10 , pp. 1627-1630
  • 3
    • 0030213960 scopus 로고    scopus 로고
    • AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
    • Aug.
    • M. Osinski, J. Zeller, P. Chiu, and B. S. Phillips, "AlGaN/InGaN/ GaN blue light emitting diode degradation under pulsed current stress," Appl. Phys. Lett., vol. 69, no. 7, pp. 898-900, Aug. 1996.
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.7 , pp. 898-900
    • Osinski, M.1    Zeller, J.2    Chiu, P.3    Phillips, B.S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.