Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 239-242

  Fong, W K ^a   Leung, K K ^a   Surya, C ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

A1. Doping; A3. Metal organic chemical vapor deposition; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILANES; X RAY DIFFRACTION;

DITERTIARYBUTYL SILANE (DTBSI); GASEOUS SI SOURCES; HIGH RESOLUTION X-RAY DIFFRACTION (HRXRD); SI DOPANT SOURCES;

SEMICONDUCTOR GROWTH;

EID: 33846445692     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.024     Document Type: Article

References (9)

1. Pakula K., Bozek R., Baranowski J.M., Jasinski J., and Liliental-Weber Z. J. Crystal Growth 267 (2004) 1
2. Rowland L.B., Doverspike K., and Gaskill D.K. Appl. Phys. Lett. 66 (1995) 1495
3. Leu S., Protzmann H., Höhnsdorf F., Stolz W., Steinkirchner J., and Hufgard E. J. Crystal Growth 195 (1998) 91
4. Kim S., Oh J., Kang J., Kim D., Won J., Kim J.W., and Cho H.K. J. Crystal Growth 262 (2004) 7
5. Wu X.H., Fini P., Tarsa E.J., Heying B., Keller S., Mishra U.K., and DenBaars S.P. J. Crystal Growth 189-190 (1998) 231
6. Nakada N., Mori M., Ishikawa H., Egawa T., and Jimbo T. Jpn. J. Appl. Phys. 42 (2003) 2573
7. Hansen P.J., Strausser Y.E., Erickson A.N., Tarsa E.J., Kozodoy P., Brazel E.G., Ibbetson J.P., Mishra U., Narayanamurti V., DenBaars S.P., and Speck J.S. Appl. Phys. Lett. 72 (1998) 2247
8. Li S.T., Mo C.L., Wang L., Xiong C.B., Peng X.X., Jiang F.Y., Deng Z.B., and Gong D.W. J. Lumin 93 (2001) 321
9. Van der Stricht W., Moerman I., Demeester P., Crawley J.A., and Thrush E.J. MRS Internet J. Nitride Semicond. Res. 1 (1996) 3