High brightness GaN LEDs degradation during dc and pulsed stress

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1720-1724

  Meneghini, M ^a   Podda, S ^b   Morelli, A ^b   Pintus, R ^b   Trevisanello, L ^a   Meneghesso, G ^a   Vanzi, M ^b   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; INDIUM COMPOUNDS; LEAKAGE CURRENTS; SCANNING ELECTRON MICROSCOPY;

DEGRADATION MODES; OPTICAL POWER MEASUREMENTS; PULSED CURRENT CONDITIONS;

LIGHT EMITTING DIODES;

EID: 33747801689     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.050     Document Type: Article

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