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Volumn 59, Issue 3-4, 2003, Pages 257-283

An automated design system methodology and strategy for electrostatic discharge protection circuits in RF CMOS and BiCMOS silicon germanium technology

Author keywords

Automatic generation; CAD; Design systems; ESD; P cells; RF

Indexed keywords

AUTOMATION; CMOS INTEGRATED CIRCUITS; HUMAN FORM MODELS; MICROPROCESSOR CHIPS; OPTIMIZATION; PARAMETER ESTIMATION;

EID: 0141905771     PISSN: 03043886     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3886(03)00105-0     Document Type: Article
Times cited : (2)

References (22)
  • 5
    • 84948764054 scopus 로고    scopus 로고
    • An automated electrostatic discharge computer-aided design system with the incorporation of hierarchical parameterized cells in BiCMOS analog and RF technology for mixed signal applications
    • Charlotte, NC, October
    • S. Voldman, S. Strang, D. Jordan, An automated electrostatic discharge computer-aided design system with the incorporation of hierarchical parameterized cells in BiCMOS analog and RF technology for mixed signal applications, Proceedings of the EOS/ESD Symposium, Charlotte, NC, October 2002, pp. 296-305.
    • (2002) Proceedings of the EOS/ESD Symposium , pp. 296-305
    • Voldman, S.1    Strang, S.2    Jordan, D.3
  • 6
    • 0032315138 scopus 로고    scopus 로고
    • SiGe and GaAs as competitive technologies for RF-applications
    • Minneapolis, MN
    • U. Konig, SiGe and GaAs as competitive technologies for RF-applications, Bipolar Circuits and Technology Meeting, Minneapolis, MN, 1998, pp. 87-92.
    • (1998) Bipolar Circuits and Technology Meeting , pp. 87-92
    • Konig, U.1
  • 7
    • 0035167297 scopus 로고    scopus 로고
    • Prospects for 200hspGHz on silicon with silicon germanium heterojunction bipolar transistors, Invited Paper
    • Minneapolis, MN 19-26
    • A. Gruhle, Prospects for 200GHz on silicon with silicon germanium heterojunction bipolar transistors, Invited Paper, Proceedings of the Bipolar Circuit Technology Meeting, Minneapolis, MN, 2001, pp. 19-26.
    • (2001) Proceedings of the Bipolar Circuit Technology Meeting
    • Gruhle, A.1
  • 9
    • 0035168264 scopus 로고    scopus 로고
    • A 0.18μm SiGe:C RF BiCMOS technology for wireless and gigabit optical communication applications
    • Minneapolis, MN
    • J. Kirchgessner, et al., A 0.18μm SiGe:C RF BiCMOS technology for wireless and gigabit optical communication applications, Proceedings of the Bipolar Circuit Technology Meeting, Minneapolis, MN, 2001, pp. 151-154.
    • (2001) Proceedings of the Bipolar Circuit Technology Meeting , pp. 151-154
    • Kirchgessner, J.1
  • 11
    • 0032309225 scopus 로고    scopus 로고
    • The state of the art of electrostatic discharge protection: Physics, technology, circuits, designs, simulation and scaling
    • Minneapolis, MN, September 27-29
    • S. Voldman, The state of the art of electrostatic discharge protection: physics, technology, circuits, designs, simulation and scaling, Invited Paper, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting Symposium, Minneapolis, MN, September 27-29, 1998, pp. 19-31.
    • (1998) Invited Paper, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting Symposium , pp. 19-31
    • Voldman, S.1
  • 12
    • 0002841217 scopus 로고    scopus 로고
    • Investigation on different ESD protection strategies devoted to 3.3V RF applications (2GHz) in a 0.18μm CMOS process
    • Anaheim, CA, September
    • C. Richier, et al., Investigation on different ESD protection strategies devoted to 3.3V RF applications (2GHz) in a 0.18μm CMOS process, Proceedings of the EOS/ESD Symposium, Anaheim, CA, September 2000, pp. 251-260.
    • (2000) Proceedings of the EOS/ESD Symposium , pp. 251-260
    • Richier, C.1
  • 17
    • 84948947073 scopus 로고    scopus 로고
    • Influence of process and device design on ESD sensitivity of a silicon germanium heterojunction bipolar transistor
    • Portland, OR
    • S. Voldman, L.D. Lanzerotti, R.A. Johnson, Influence of process and device design on ESD sensitivity of a silicon germanium heterojunction bipolar transistor, Proceedings of the EOS/ESD Symposium, Portland, OR, 2001, pp. 364-373.
    • (2001) Proceedings of the EOS/ESD Symposium , pp. 364-373
    • Voldman, S.1    Lanzerotti, L.D.2    Johnson, R.A.3
  • 18
    • 84948974189 scopus 로고    scopus 로고
    • Silicon germanium heterojunction bipolar transistor ESD power clamps and the johnson limit
    • September 13, Portland, OR
    • S. Voldman, A. Botula, D. Hui, P. Juliano, Silicon germanium heterojunction bipolar transistor ESD power clamps and the johnson limit, Proceedings of the EOS/ESD Symposium, September 13, Portland, OR, 2001, pp. 326-336.
    • (2001) Proceedings of the EOS/ESD Symposium , pp. 326-336
    • Voldman, S.1    Botula, A.2    Hui, D.3    Juliano, P.4
  • 20
    • 84948734726 scopus 로고    scopus 로고
    • MAX) silicon germanium heterojunction bipolar transistor with carbon incorporation
    • Charlotte, NC, October
    • MAX) silicon germanium heterojunction bipolar transistor with carbon incorporation, Proceedings of the EOS/ESD Symposium, Charlotte, NC, October 2002, pp. 52-62.
    • (2002) Proceedings of the EOS/ESD Symposium , pp. 52-62
    • Voldman, S.1
  • 21
    • 0038649035 scopus 로고    scopus 로고
    • The influence of process and design of sub-collectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe Technology
    • Dallas, TX
    • S. Voldman, L. Lanzerotti, B. Ronan, S.St. Onge, J. Dunn, The influence of process and design of sub-collectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe Technology, Proceedings of the International Reliability Physics Symposium, Dallas, TX, 2003, pp. 347-357.
    • (2003) Proceedings of the International Reliability Physics Symposium , pp. 347-357
    • Voldman, S.1    Lanzerotti, L.2    Ronan, B.3    St. Onge, S.4    Dunn, J.5
  • 22
    • 3042516253 scopus 로고    scopus 로고
    • The effect of deep trench isolation, trench isolation and sub-collector doping on the Electrostatic Discharge (ESD) robustness of RF ESD STI-Bound P+/N-well diodes in BiCMOS silicon germanium technology
    • Las Vegas, NV
    • S. Voldman, The effect of deep trench isolation, trench isolation and sub-collector doping on the Electrostatic Discharge (ESD) robustness of RF ESD STI-Bound P+/N-well diodes in BiCMOS silicon germanium technology, to be presented at the EOS/ESD Symposium, Las Vegas, NV, 2003.
    • (2003) EOS/ESD Symposium
    • Voldman, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.