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Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies
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Dallas, TX
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A design system for auto-generation of ESD circuits
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S. Voldman, S. Strang, D. Jordan, A design system for auto-generation of ESD circuits, Proceedings of the International Cadence Users Group Conference, September 16-18, San Jose, California, 2002.
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Proceedings of the International Cadence Users Group Conference
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An automated electrostatic discharge computer-aided design system with the incorporation of hierarchical parameterized cells in BiCMOS analog and RF technology for mixed signal applications
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Charlotte, NC, October
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S. Voldman, S. Strang, D. Jordan, An automated electrostatic discharge computer-aided design system with the incorporation of hierarchical parameterized cells in BiCMOS analog and RF technology for mixed signal applications, Proceedings of the EOS/ESD Symposium, Charlotte, NC, October 2002, pp. 296-305.
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Minneapolis, MN
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The state of the art of electrostatic discharge protection: Physics, technology, circuits, designs, simulation and scaling
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Minneapolis, MN, September 27-29
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S. Voldman, The state of the art of electrostatic discharge protection: physics, technology, circuits, designs, simulation and scaling, Invited Paper, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting Symposium, Minneapolis, MN, September 27-29, 1998, pp. 19-31.
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Invited Paper, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting Symposium
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Voldman, S.1
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Investigation on different ESD protection strategies devoted to 3.3V RF applications (2GHz) in a 0.18μm CMOS process
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Anaheim, CA, September
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Electrostatic discharge and high current pulse characterization of epitaxial base silicon germanium heterojunction bipolar transistors
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S. Voldman, P. Juliano, R. Johnson, N. Schmidt, A. Joseph, S. Furkay, E. Rosenbaum, J. Dunn, D.L. Harame, B. Meyerson, Electrostatic discharge and high current pulse characterization of epitaxial base silicon germanium heterojunction bipolar transistors, Proceedings of the International Reliability Physics Symposium, Dallas, TX, March 2000, pp. 310-317.
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Electrostatic discharge characterization of epitaxial base silicon germanium heterojunction bipolar transistors
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Anaheim, CA, September
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S. Voldman, N. Schmidt, R. Johnson., L. Lanzerotti, A. Joseph, C. Brennan, J. Dunn, D. Harame, P. Juliano, E. Rosenbaum, B. Meyerson, Electrostatic discharge characterization of epitaxial base silicon germanium heterojunction bipolar transistors, Proceedings of the EOS/ESD Symposium, Anaheim, CA, September 2000, pp. 239-251.
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Proceedings of the EOS/ESD Symposium
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Voldman, S.1
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16
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0034832579
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Emitter base junction ESD reliability of an epitaxial base silicon germanium heterojunction transistor
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Singapore, July
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S. Voldman, L.D. Lanzerotti, R. Johnson, Emitter base junction ESD reliability of an epitaxial base silicon germanium heterojunction transistor, Proceedings of the International Physical and Failure Analysis of Integrated Circuits, Singapore, July 2001, pp. 79-84.
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Proceedings of the International Physical and Failure Analysis of Integrated Circuits
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Voldman, S.1
Lanzerotti, L.D.2
Johnson, R.3
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17
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84948947073
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Influence of process and device design on ESD sensitivity of a silicon germanium heterojunction bipolar transistor
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Portland, OR
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S. Voldman, L.D. Lanzerotti, R.A. Johnson, Influence of process and device design on ESD sensitivity of a silicon germanium heterojunction bipolar transistor, Proceedings of the EOS/ESD Symposium, Portland, OR, 2001, pp. 364-373.
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Proceedings of the EOS/ESD Symposium
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Voldman, S.1
Lanzerotti, L.D.2
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18
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84948974189
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Silicon germanium heterojunction bipolar transistor ESD power clamps and the johnson limit
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September 13, Portland, OR
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S. Voldman, A. Botula, D. Hui, P. Juliano, Silicon germanium heterojunction bipolar transistor ESD power clamps and the johnson limit, Proceedings of the EOS/ESD Symposium, September 13, Portland, OR, 2001, pp. 326-336.
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Proceedings of the EOS/ESD Symposium
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Voldman, S.1
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19
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0141933379
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High current Transmission Line Pulse (TLP) and ESD Characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation
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Dallas, TX, April
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B. Ronan, S. Voldman, L. Lanzerotti, J. Rascoe, D. Sheridan, K. Rajendran, High current Transmission Line Pulse (TLP) and ESD Characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation, Proceedings of the International Reliability Physics Symposium (IRPS), Dallas, TX, April 2002, pp. 175-283.
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Proceedings of the International Reliability Physics Symposium (IRPS)
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Ronan, B.1
Voldman, S.2
Lanzerotti, L.3
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20
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84948734726
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MAX) silicon germanium heterojunction bipolar transistor with carbon incorporation
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Charlotte, NC, October
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MAX) silicon germanium heterojunction bipolar transistor with carbon incorporation, Proceedings of the EOS/ESD Symposium, Charlotte, NC, October 2002, pp. 52-62.
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Proceedings of the EOS/ESD Symposium
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Voldman, S.1
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21
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0038649035
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The influence of process and design of sub-collectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe Technology
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Dallas, TX
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S. Voldman, L. Lanzerotti, B. Ronan, S.St. Onge, J. Dunn, The influence of process and design of sub-collectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe Technology, Proceedings of the International Reliability Physics Symposium, Dallas, TX, 2003, pp. 347-357.
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Proceedings of the International Reliability Physics Symposium
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Voldman, S.1
Lanzerotti, L.2
Ronan, B.3
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Dunn, J.5
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22
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3042516253
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The effect of deep trench isolation, trench isolation and sub-collector doping on the Electrostatic Discharge (ESD) robustness of RF ESD STI-Bound P+/N-well diodes in BiCMOS silicon germanium technology
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Las Vegas, NV
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S. Voldman, The effect of deep trench isolation, trench isolation and sub-collector doping on the Electrostatic Discharge (ESD) robustness of RF ESD STI-Bound P+/N-well diodes in BiCMOS silicon germanium technology, to be presented at the EOS/ESD Symposium, Las Vegas, NV, 2003.
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(2003)
EOS/ESD Symposium
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Voldman, S.1
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