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Volumn , Issue , 2003, Pages 113-116
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SiGe HBT and BiCMOS Technologies
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC POTENTIAL;
ELECTRODES;
HETEROJUNCTION BIPOLAR TRANSISTORS;
LSI CIRCUITS;
POLYSILICON;
SILICON COMPOUNDS;
SURFACE ROUGHNESS;
PARASITIC CAPACITANCE;
SACRIFICIAL EMITTER PROCESS (SEP);
CMOS INTEGRATED CIRCUITS;
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EID: 0842309832
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (18)
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References (19)
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