-
1
-
-
84984961482
-
Challenges in the packaging of MEMS
-
C. O'Neal, A. Malshe, S. Singh, W. Brown, and W. Eaton, "Challenges in the packaging of MEMS," in Proc. Int. Symp. Adv. Packag. Mater., Process., Properties, Interfaces, 1999, pp. 41-47.
-
(1999)
Proc. Int. Symp. Adv. Packag. Mater., Process., Properties, Interfaces
, pp. 41-47
-
-
O'Neal, C.1
Malshe, A.2
Singh, S.3
Brown, W.4
Eaton, W.5
-
2
-
-
0032136370
-
Wafer-to-wafer bonding for microstructure formation
-
Aug.
-
M. Schmidt, "Wafer-to-wafer bonding for microstructure formation," Proc. IEEE 86, no.8, pp. 1575-1585, Aug. 1998.
-
(1998)
Proc. IEEE
, vol.86
, Issue.8
, pp. 1575-1585
-
-
Schmidt, M.1
-
3
-
-
0142165226
-
Single wafer encapsulation of MEMS devices
-
Aug.
-
R. Candler, W. Park, H. Li, G. Yama, A. Partridge, M. Lutz, and T. Kenny, "Single wafer encapsulation of MEMS devices," IEEE Trans. Adv. Packag. 26, no.3, pp. 227-232, Aug. 2003.
-
(2003)
IEEE Trans. Adv. Packag.
, vol.26
, Issue.3
, pp. 227-232
-
-
Candler, R.1
Park, W.2
Li, H.3
Yama, G.4
Partridge, A.5
Lutz, M.6
Kenny, T.7
-
4
-
-
50149122273
-
MEMS oscillators for high volume commercial applications
-
M. Lutz, A. Partridge, P. Gupta, N. Buchan, E. Klaassen, J. McDonald, and K. Petersen, "MEMS oscillators for high volume commercial applications," in Proc. Int. Conf. TRANSDUCERS, 2007, pp. 49-52.
-
(2007)
Proc. Int. Conf. TRANSDUCERS
, pp. 49-52
-
-
Lutz, M.1
Partridge, A.2
Gupta, P.3
Buchan, N.4
Klaassen, E.5
McDonald, J.6
Petersen, K.7
-
5
-
-
3042704176
-
Tribological impact of SiC encapsulation of released polycrystalline silicon microstructures
-
DOI 10.1023/B:TRIL.0000032445.01193.19
-
W. Park, R. Candler, S. Kronmueller, M. Lutz, A. Partridge, G. Yama, and T. Kenny, "Wafer-scale film encapsulation of microma-chined accelerometers," in Proc. 12th Int. Conf. TRANSDUCERS, 2003 2, pp. 1903-1906. (Pubitemid 38865467)
-
(2004)
Tribology Letters
, vol.17
, Issue.2
, pp. 195-198
-
-
Ashurst, W.R.1
Wijesundara, M.B.J.2
Carraro, C.3
Maboudian, R.4
-
6
-
-
33744919845
-
Polycrystalline silicon carbide as a substrate material for reducing adhesion in MEMS
-
DOI 10.1007/s11249-006-9024-9
-
K. Lebouitz, A. Mazaheri, R. Howe, and A. Pisano, "Vacuum encapsulation of resonant devices using permeable polysilicon," in Proc. 12th IEEE Int. Conf. MEMS, 1999, pp. 470-475. (Pubitemid 43842533)
-
(2006)
Tribology Letters
, vol.21
, Issue.3
, pp. 226-232
-
-
Gao, D.1
Carraro, C.2
Howe, R.T.3
Maboudian, R.4
-
7
-
-
3042704176
-
Tribo-logical impact of SiC encapsulation of released polycrystalline silicon microstructures
-
Aug.
-
W. Ashurst, M. Wijesundara, C. Carraro, and R. Maboudian, "Tribo-logical impact of SiC encapsulation of released polycrystalline silicon microstructures," Tribol. Lett. 17, no.2, pp. 195-198, Aug. 2004.
-
(2004)
Tribol. Lett.
, vol.17
, Issue.2
, pp. 195-198
-
-
Ashurst, W.1
Wijesundara, M.2
Carraro, C.3
Maboudian, R.4
-
8
-
-
33744919845
-
Polycrystalline silicon carbide as a substrate material for reducing adhesion in MEMS
-
Mar.
-
D. Gao, C. Carraro, R. Howe, and R. Maboudian, "Polycrystalline silicon carbide as a substrate material for reducing adhesion in MEMS," Tribol. Lett. 21, no.3, pp. 226-232, Mar. 2006.
-
(2006)
Tribol. Lett.
, vol.21
, Issue.3
, pp. 226-232
-
-
Gao, D.1
Carraro, C.2
Howe, R.3
Maboudian, R.4
-
9
-
-
65949109309
-
Robust wafer-level thin-film encapsulation of microstructures using low stress pecvd silicon carbide.
-
Article number 4805338, DOI 10.1109/MEMSYS.2009.4805338
-
V. Rajaraman, L.S.Pakula, H.T.M.Pham, P. M. Sarro, and P.J.French,"Robust wafer-level thin-film encapsulation ofmicrostructures using low stress pecvd silicon carbide," inProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS),2009, pp. 140-143,Article number 4805338, DOI 10.1109/MEMSYS.2009.4805338.
-
(2009)
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
, pp. 140-143
-
-
Rajaraman, V.1
Pakula, L.S.2
Pham, H.T.M.3
Sarro, P.M.4
French, P.J.5
-
10
-
-
33846113316
-
Stress control of polycrystalline 3C-SiC films in a large-scale LPCVD reactor using 1,3-disilabutane and dichlorosilane as precursors
-
DOI 10.1088/0960-1317/16/12/029, PII S0960131706317743, 029
-
C. S. Roper, R. Candler, S. Yoneoka, T. Kenny, R. T. Howe, and R. Maboudian, "Simultaneous wafer-scale vacuum encapsulation and mi-crostructure cladding with LPCVD polycrystalline 3C-SiC," in Proc. 17th Int. Conf. TRANSDUCERS, 2009, pp. 1031-1034. (Pubitemid 46069545)
-
(2006)
Journal of Micromechanics and Microengineering
, vol.16
, Issue.12
, pp. 2736-2739
-
-
Roper, C.S.1
Howe, R.T.2
Maboudian, R.3
-
11
-
-
43049113904
-
Characterization of polycrystalline 3C-SiC films deposited from the precursors 1,3-disilabutane and dichlorosilane
-
DOI 10.1063/1.2907871
-
C. Roper, V. Radmilovic, R. Howe, and R. Maboudian, "Single-source chemical vapor deposition of SiC films in a large-scale low-pressure CVD growth, chemical, and mechanical characterization reactor," J. Elec-trochem. Soc. 153, no.8, pp. C562-C566, 2006. (Pubitemid 351623668)
-
(2008)
Journal of Applied Physics
, vol.103
, Issue.8
, pp. 084907
-
-
Roper, C.S.1
Radmilovic, V.2
Howe, R.T.3
Maboudian, R.4
-
12
-
-
33846113316
-
Stress control of polycrystalline 3C-SiC films in a large-scale LPCVD reactor using 1,3-disilabutane and dichlorosilane as precursors
-
Nov.
-
C. Roper, R. Howe, and R. Maboudian, "Stress control of polycrystalline 3C-SiC films in a large-scale LPCVD reactor using 1,3-disilabutane and dichlorosilane as precursors," J. Micromech. Microeng. 16, no.12, pp. 2736-2739, Nov. 2006.
-
(2006)
J. Micromech. Microeng.
, vol.16
, Issue.12
, pp. 2736-2739
-
-
Roper, C.1
Howe, R.2
Maboudian, R.3
-
13
-
-
43049113904
-
Characterization of polycrystalline 3C-SiC films deposited from the precursors 1,3-disilabutane and dichlorosilane
-
Apr.
-
C. Roper, V. Radmilovic, R. Howe, and R. Maboudian, " Characterization of polycrystalline 3C-SiC films deposited from the precursors 1,3-disilabutane and dichlorosilane," J. Appl. Phys. 103, no.8, p. 084 907, Apr. 2008.
-
(2008)
J. Appl. Phys.
, vol.103
, Issue.8
, pp. 084907
-
-
Roper, C.1
Radmilovic, V.2
Howe, R.3
Maboudian, R.4
-
14
-
-
67650714862
-
-
Ph.D. dissertation, Univ. California, Berkeley, CA
-
C. Roper, "Silicon carbide thin films via low pressure chemical vapor deposition for micro-and nano-electromechanical systems," Ph.D. dissertation, Univ. California, Berkeley, CA, 2007.
-
(2007)
Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro-and Nano-electromechanical Systems
-
-
Roper, C.1
-
16
-
-
0036572403
-
Energy transfer model for squeeze-film air damping in low vacuum
-
DOI 10.1088/0960-1317/12/3/322, PII S0960131702330572
-
R. Melamud, S. Chandorkar, B. Kim, H. Lee, J. Salvia, G. Bahl, M. Hopcroft, and T. Kenny, "Temperature-insensitive composite mi-cromechanical resonators," J. Microelectromech. Syst. 18, no.6, pp. 1409-1419, 2009. (Pubitemid 34575167)
-
(2002)
Journal of Micromechanics and Microengineering
, vol.12
, Issue.3
, pp. 341-346
-
-
Bao, M.1
Yang, H.2
Yin, H.3
Sun, Y.4
-
17
-
-
10844268965
-
On the squeeze-film damping of micro-resonators in the free-molecule regime
-
DOI 10.1088/0960-1317/14/12/018, PII S0960131704790646
-
S. Chandorkar, M. Agarwal, R. Melamud, R. Candler, K. Goodson, and T. Kenny, "Limits of quality factor in bulk-mode micromechanical resonators," in Proc. IEEE 21st Int. Conf. MEMS, 2008, pp. 74-77. (Pubitemid 40002296)
-
(2004)
Journal of Micromechanics and Microengineering
, vol.14
, Issue.12
, pp. 1726-1733
-
-
Hutcherson, S.1
Ye, W.2
-
18
-
-
0036572403
-
Energy transfer model for squeeze-film air damping in low vacuum
-
Apr.
-
M. Bao, H. Yang, H. Yin, and Y. Sun, "Energy transfer model for squeeze-film air damping in low vacuum," J. Micromech. Microeng. 12, no.3, pp. 341-346, Apr. 2002.
-
(2002)
J. Micromech. Microeng.
, vol.12
, Issue.3
, pp. 341-346
-
-
Bao, M.1
Yang, H.2
Yin, H.3
Sun, Y.4
-
19
-
-
33747399833
-
Impact of geometry on thermoelastic dissipation in micromechanical resonant beams
-
DOI 10.1109/JMEMS.2006.879374
-
S. Hutcherson and W. Ye, "On the squeeze-film damping of micro-resonators in the free-molecule regime," J. Micromech. Microeng. 14, no.12, pp. 1726-1733, Sep. 2004. (Pubitemid 44251400)
-
(2006)
Journal of Microelectromechanical Systems
, vol.15
, Issue.4
, pp. 927-934
-
-
Candler, R.N.1
Duwel, A.2
Varghese, M.3
Chandorkar, S.A.4
Hopcroft, M.A.5
Park, W.-T.6
Kim, B.7
Yama, G.8
Partridge, A.9
Lutz, M.10
Kenny, T.W.11
-
20
-
-
0031094897
-
Elastothermodynamic damping in laminated composites
-
PII S0020768396000856
-
C. Zener, "Internal friction in solids. I. Theory of internal friction in reeds," Phys. Rev. 52, no.3, pp. 230-235, Aug. 1937. (Pubitemid 127419397)
-
(1997)
International Journal of Solids and Structures
, vol.34
, Issue.9
, pp. 1075-1092
-
-
Bishop, J.E.1
Kinra, V.K.2
-
21
-
-
27944498933
-
Analysis of thermoelastic damping in laminated composite micromechanical beam resonators
-
DOI 10.1088/0960-1317/15/12/023, PII S0960131705079441
-
R. Candler, A. Duwel, M. Varghese, S. Chandorkar, M. Hopcroft, W. Park, B. Kim, G. Yama, A. Partridge, M. Lutz, and T. W. Kenny, "Impact of geometry on thermoelastic dissipation in micromechanical resonant beams," J. Microelectromech. Syst. 15, no.4, pp. 927-934, Aug. 2006. (Pubitemid 41677108)
-
(2005)
Journal of Micromechanics and Microengineering
, vol.15
, Issue.12
, pp. 2398-2404
-
-
Vengallatore, S.1
-
22
-
-
0031094897
-
Elastothermodynamic damping in laminated composites
-
J. Bishop and V. Kinra, "Elastothermodynamic damping in laminated composites," Int. J. Solids Struct. 34, no.9, pp. 1075-1092, 1997.
-
(1997)
Int. J. Solids Struct.
, vol.34
, Issue.9
, pp. 1075-1092
-
-
Bishop, J.1
Kinra, V.2
-
23
-
-
38949156865
-
Measurement of the elastic constants of a columnar SiC thin film
-
DOI 10.1103/PhysRevLett.100.055503
-
S. Vengallatore, "Analysis of thermoelastic damping in laminated composite micromechanical beam resonators," J. Micromech. Microeng. 15, no.12, pp. 2398-2404, Nov. 2005. (Pubitemid 351220707)
-
(2008)
Physical Review Letters
, vol.100
, Issue.5
, pp. 055503
-
-
Pestka, K.A.1
Maynard, J.D.2
Gao, D.3
Carraro, C.4
-
24
-
-
0021463798
-
Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K.
-
DOI 10.1063/1.333965
-
S. Chandorkar, R. Candler, A. Duwel, R. Melamud, M. Agarwal, K. Goodson, and T. Kenny, "Multimode thermoelastic dissipation," J. Appl. Phys. 105, no.4, p. 043 505, Feb. 2009. (Pubitemid 14626802)
-
(1984)
Journal of Applied Physics
, vol.56
, Issue.2
, pp. 314-320
-
-
Okada Yasumasa1
Tokumaru Yozo2
-
25
-
-
0022914104
-
THERMAL EXPANSION OF THE CUBIC (3C) POLYTYPE OF SiC.
-
K. Pestka, J. Maynard, D. Gao, and C. Carraro, "Measurement of the elastic constants of a columnar SiC thin film," Phys. Rev. Lett. 100, no.5, p. 055 503, Feb. 2008. (Pubitemid 17530449)
-
(1986)
Journal of Materials Science
, vol.21
, Issue.12
, pp. 4366-4368
-
-
Li, Z.1
Bradt, R.C.2
-
26
-
-
0021463798
-
Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K
-
Jul.
-
Y. Okada and Y. Tokumaru, "Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K," J. Appl. Phys. 56, no.2, pp. 314-320, Jul. 1984.
-
(1984)
J. Appl. Phys.
, vol.56
, Issue.2
, pp. 314-320
-
-
Okada, Y.1
Tokumaru, Y.2
-
27
-
-
34249277079
-
Mechanical properties of a 3C-SiC film between room temperature and 600 °c
-
DOI 10.1088/0022-3727/40/11/012, PII S0022372707452512, 012
-
Z. Li and R. Bradt, "Thermal expansion of the cubic (3C) polytype of SiC," J. Mater. Sci. 21, no.12, pp. 4366-4368, Dec. 1986. (Pubitemid 46804687)
-
(2007)
Journal of Physics D: Applied Physics
, vol.40
, Issue.11
, pp. 3335-3342
-
-
Pozzi, M.1
Hassan, M.2
Harris, A.J.3
Burdess, J.S.4
Jiang, L.5
Lee, K.K.6
Cheung, R.7
Phelps, G.J.8
Wright, N.G.9
Zorman, C.A.10
Mehregany, M.11
-
28
-
-
0003426859
-
-
New York: Wiley-Interscience
-
M. Levinshtein, S. Rumyantsev, and M. Shur, Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe. New York: Wiley-Interscience, 2001.
-
(2001)
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe
-
-
Levinshtein, M.1
Rumyantsev, S.2
Shur, M.3
-
29
-
-
34249277079
-
Mechanical properties of a 3C-SiC film between room temperature and 600 C
-
May
-
M. Pozzi, M. Hassan, A. Harris, J. Burdess, L. Jiang, K. Lee, R. Cheung, G. Phelps, N. Wright, C. Zorman, and M. Mehregany, "Mechanical properties of a 3C-SiC film between room temperature and 600 C," J. Phys. D, Appl. Phys. 40, no.11, pp. 3335-3342, May 2007.
-
(2007)
J. Phys. D, Appl. Phys.
, vol.40
, Issue.11
, pp. 3335-3342
-
-
Pozzi, M.1
Hassan, M.2
Harris, A.3
Burdess, J.4
Jiang, L.5
Lee, K.6
Cheung, R.7
Phelps, G.8
Wright, N.9
Zorman, C.10
Mehregany, M.11
-
30
-
-
27544502546
-
Hydrogen diffusion and pressure control of encapsulated MEMS resonators
-
R. Candler, W. Park, M. Hopcroft, B. Kim, and T. Kenny, "Hydrogen diffusion and pressure control of encapsulated MEMS resonators," in Proc. 13th Int. Conf. TRANSDUCERS, 2005 1, pp. 920-923.
-
(2005)
Proc. 13th Int. Conf. TRANSDUCERS
, vol.1
, pp. 920-923
-
-
Candler, R.1
Park, W.2
Hopcroft, M.3
Kim, B.4
Kenny, T.5
-
31
-
-
0036772724
-
Vacuum packaging technology using localized aluminum/silicon-to-glass bonding
-
Oct.
-
Y. Cheng, W. Hsu, K. Najafi, C. Nguyen, and L. Lin, "Vacuum packaging technology using localized aluminum/silicon-to-glass bonding," J. Microelectromech. Syst. 11, no.5, pp. 556-565, Oct. 2002.
-
(2002)
J. Microelectromech. Syst.
, vol.11
, Issue.5
, pp. 556-565
-
-
Cheng, Y.1
Hsu, W.2
Najafi, K.3
Nguyen, C.4
Lin, L.5
-
32
-
-
27544437585
-
Frequency stability of wafer-scale encapsulated MEMS resonators
-
4A1.4, TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
-
B. Kim, R. Candler, R. Melamud, S. Yoneoka, H. Lee, G. Yama, and T. Kenny, "Identification and management of diffusion pathways in polysilicon encapsulation for MEMS devices," in Proc. IEEE 21st Int. Conf. MEMS, 2008, pp. 104-107. (Pubitemid 41538886)
-
(2005)
Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
, vol.2
, pp. 1965-1968
-
-
Kim, B.1
Candler, R.N.2
Hopcroft, M.3
Agarwal, M.4
Park, W.-T.5
Kenny, T.W.6
-
33
-
-
50049119128
-
Using MEMS to build the device and the package
-
B. Kim, M. Hopcroft, C. Jha, R. Melamud, S. Chandorkar, M. Agarwal, K. Chen, W. Park, R. Candler, G. Yama, A. Partridge, M. Lutz, and T. W. Kenny, "Using MEMS to build the device and the package," in Proc. Int. Conf. TRANSDUCERS, 2007, pp. 331-334.
-
(2007)
Proc. Int. Conf. TRANSDUCERS
, pp. 331-334
-
-
Kim, B.1
Hopcroft, M.2
Jha, C.3
Melamud, R.4
Chandorkar, S.5
Agarwal, M.6
Chen, K.7
Park, W.8
Candler, R.9
Yama, G.10
Partridge, A.11
Lutz, M.12
Kenny, T.W.13
-
34
-
-
27544437585
-
Frequency stability of wafer-scale encapsulated MEMS resonators
-
B. Kim, R. Candler, M. Hopcroft, M. Agarwal, W. Park, and T. Kenny, "Frequency stability of wafer-scale encapsulated MEMS resonators," in Proc. 13th Int. Conf. TRANSDUCERS, 2005 2, pp. 1965-1968.
-
(2005)
Proc. 13th Int. Conf. TRANSDUCERS
, vol.2
, pp. 1965-1968
-
-
Kim, B.1
Candler, R.2
Hopcroft, M.3
Agarwal, M.4
Park, W.5
Kenny, T.6
-
35
-
-
34250632859
-
Temperature-compensated high-stability silicon resonators
-
Jun.
-
R. Melamud, B. Kim, S. Chandorkar, M. Hopcroft, M. Agarwal, C. Jha, and T. Kenny, "Temperature-compensated high-stability silicon resonators," Appl. Phys. Lett. 90, no.24, p. 244 107, Jun. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.90
, Issue.24
, pp. 244107
-
-
Melamud, R.1
Kim, B.2
Chandorkar, S.3
Hopcroft, M.4
Agarwal, M.5
Jha, C.6
Kenny, T.7
|