Polycrystalline silicon carbide as a substrate material for reducing adhesion in MEMS

Tribology Letters

Volumn 21, Issue 3, 2006, Pages 226-232

  Gao, D ^a,c   Carraro, C ^a   Howe, R T ^b,d   Maboudian, R ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c University of Pittsburgh   (United States)

^d Stanford University   (United States)

Author keywords

Adhesion; MEMS; SiC oxidization; Silicon carbide; Stiction

Indexed keywords

ADHESION; ATOMIC FORCE MICROSCOPY; CONTACT ANGLE; MICROMACHINING; OXIDATION; POLYSILICON; STICTION; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

CANTILEVER BEAM ARRAYS; DETACHMENT LENGTHS; MICROELECTROMECHANICAL SYSTEM;

SILICON CARBIDE;

ADHESION; ATOMIC FORCE MICROSCOPY; CONTACT ANGLE; MICROMACHINING; OXIDATION; POLYSILICON; SILICON CARBIDE; STICTION; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 33744919845     PISSN: 10238883     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11249-006-9024-9     Document Type: Article

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