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Volumn 40, Issue 11, 2007, Pages 3335-3342

Mechanical properties of a 3C-SiC film between room temperature and 600 °c

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC MODULI; LASER DOPPLER VELOCIMETERS; MEMS; POLYSILICON; RESIDUAL STRESSES; TENSILE STRESS;

EID: 34249277079     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/11/012     Document Type: Article
Times cited : (38)

References (13)
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    • Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
    • Casady J B and Johnson R W 1996 Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review Solid-State Electron. 39 1409-22
    • (1996) Solid-State Electron. , vol.39 , Issue.10 , pp. 1409-1422
    • Casady, J.B.1    Johnson, R.W.2
  • 3
    • 0031547308 scopus 로고    scopus 로고
    • Improvement in the growth rate of cubic silicon carbide bulk single crystals grown by the sublimation method
    • Jayatirtha H N, Spencer M G, Taylor C and Greg W 1997 Improvement in the growth rate of cubic silicon carbide bulk single crystals grown by the sublimation method J. Cryst. Growth 174 662-8
    • (1997) J. Cryst. Growth , vol.174 , Issue.1-4 , pp. 662-668
    • Jayatirtha, H.N.1    Spencer, M.G.2    Taylor, C.3    Greg, W.4
  • 4
    • 0012637901 scopus 로고
    • Elastic and inelastic properties of chemical vapor deposited epitaxial 3C-SiC
    • Su C M, Wuttig M, Fekade A and Spencer M 1995 Elastic and inelastic properties of chemical vapor deposited epitaxial 3C-SiC J. Appl. Phys. 77 5611-15
    • (1995) J. Appl. Phys. , vol.77 , Issue.11 , pp. 5611-5615
    • Su, C.M.1    Wuttig, M.2    Fekade, A.3    Spencer, M.4
  • 5
    • 0032628017 scopus 로고    scopus 로고
    • Evaluation of mechanical materials properties by means of surface micromachined structures
    • Schweitz J-A and Ericson F 1999 Evaluation of mechanical materials properties by means of surface micromachined structures Sensors Actuators A: Phys. 74 126-33
    • (1999) Sensors Actuators A: Phys. , vol.74 , Issue.1-3 , pp. 126-133
    • Schweitz, J.-A.1    Ericson, F.2
  • 8
    • 0030284096 scopus 로고    scopus 로고
    • Thermal expansion and lattice parameters of group IV semiconductors
    • Reeber R R and Wang K 1996 Thermal expansion and lattice parameters of group IV semiconductors Mater. Chem. Phys. 46 259-64
    • (1996) Mater. Chem. Phys. , vol.46 , Issue.2-3 , pp. 259-264
    • Reeber, R.R.1    Wang, K.2
  • 9
    • 0019621281 scopus 로고
    • Thermal expansion reference data: Silicon 300-850 K
    • Roberts R B 1981 Thermal expansion reference data: silicon 300-850 K J. Phys. D: Appl. Phys. 14 L163-6
    • (1981) J. Phys. D: Appl. Phys. , vol.14 , Issue.10
    • Roberts, R.B.1
  • 12
    • 0037201873 scopus 로고    scopus 로고
    • Dependence of the resonance frequency of thermally excited microcantilever resonators on temperature
    • Jianqiang H, Changchun Z, Junhua L and Yongning H 2002 Dependence of the resonance frequency of thermally excited microcantilever resonators on temperature Sensors Actuators A: Phys. 101 37-41
    • (2002) Sensors Actuators A: Phys. , vol.101 , Issue.1-2 , pp. 37-41
    • Jianqiang, H.1    Changchun, Z.2    Junhua, L.3    Yongning, H.4
  • 13
    • 22544465608 scopus 로고    scopus 로고
    • Temperature and pressure dependence of resonance in multi-layer microcantilevers
    • Sandberg R, Svendsen W, Molhave K and Boisen A 2005 Temperature and pressure dependence of resonance in multi-layer microcantilevers J. Micromech. Microeng. 15 1454-8
    • (2005) J. Micromech. Microeng. , vol.15 , Issue.8 , pp. 1454-1458
    • Sandberg, R.1    Svendsen, W.2    Molhave, K.3    Boisen, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.