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Volumn , Issue , 2009, Pages 140-143
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Robust wafer-level thin-film encapsulation of microstructures using low stress pecvd silicon carbide
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
BATCH PROCESSING;
CHIP THICKNESS;
CMOS COMPATIBLE;
DEVICE GEOMETRIES;
HARSH ENVIRONMENT;
LOW STRESS;
PECVD SIC;
POST-CMOS;
PROCESS COMPLEXITY;
RF SWITCH;
SEALING MATERIAL;
THIN FILM ENCAPSULATION;
WAFER LEVEL;
WAFER-LEVEL ENCAPSULATION;
MEMS;
MICROELECTROMECHANICAL DEVICES;
MICROSTRUCTURE;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON CARBIDE;
SILICON WAFERS;
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EID: 65949109309
PISSN: 10846999
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/MEMSYS.2009.4805338 Document Type: Conference Paper |
Times cited : (9)
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References (9)
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