Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range

Materials Science in Semiconductor Processing

Volumn 12, Issue 6, 2009, Pages 224-232

  Altuntas, H ^a   Bengi, A ^a   Aydemir, U ^a   Asar, T ^a   Cetin, S S ^a   Kars, I ^a   Altindal, S ^a   Ozcelik, S ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

Au TiO2 n Si Schottky barrier diodes; Barrier height; Gaussian distribution; I V characteristics; Inhomogeneous barrier

Indexed keywords

BARRIER HEIGHT; BARRIER HEIGHTS; CURRENT CONDUCTION; CURRENT VOLTAGE; ELECTRICAL CHARACTERIZATION; IDEALITY FACTORS; INHOMOGENEITIES; IV CHARACTERISTICS; REACTIVE MAGNETRON SPUTTERING; RICHARDSON CONSTANT; SCHOTTKY BARRIER HEIGHTS; SI SUBSTRATES; TEMPERATURE BEHAVIOR; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THEORETICAL VALUES; TIO; ZERO-BIAS;

CURRENT VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 77649274817     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2009.12.001     Document Type: Article

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