The structural and electrical properties of TiO2 thin films prepared by thermal oxidation

Physica B: Condensed Matter

Volumn 403, Issue 19-20, 2008, Pages 3718-3723

  Chowdhury, P ^a   Barshilia, Harish C ^a   Selvakumar, N ^a   Deepthi, B ^a   Rajam, K S ^a   Chaudhuri, Ayan Roy ^b   Krupanidhi, S B ^b  

^a SURFACE ENGINEERING DIVISION   (India)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Metal oxide semiconductor; Oxidation; Sputtering; Titanium oxide

Indexed keywords

CHARGE COUPLED DEVICES; CHEMICAL ANALYSIS; DIELECTRIC DEVICES; MASS SPECTROMETRY; METALLIC COMPOUNDS; METALS; MOS DEVICES; OXIDATION; OXIDE FILMS; OXIDE SEMICONDUCTORS; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; THERMOOXIDATION; TITANIUM; TITANIUM DIOXIDE; TITANIUM OXIDES; TRANSISTORS;

CHEMICAL COMPOSITIONS; CURRENT CONDUCTION MECHANISMS; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; SECONDARY ION MASS SPECTROSCOPY; SPACE CHARGE LIMITED CURRENTS; STRUCTURAL AND ELECTRICAL PROPERTIES; THREE ORDERS OF MAGNITUDE;

THIN FILMS;

EID: 55349116384     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.06.022     Document Type: Article

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