Fabrication and electrical characterization of a silicon Schottky device based on organic material

Physica Scripta

Volumn 79, Issue 3, 2009, Pages

  Aydoan, S ^a   Gullu O ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING CURRENT; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; ELECTRICAL CHARACTERIZATION; HIGH FREQUENCY; I-V METHOD; INTERFACE STATE; LOW FREQUENCY; ORGANIC MATERIALS; ROOM TEMPERATURE; SCHOTTKY DEVICES; SCHOTTKY STRUCTURES; SERIES RESISTANCES;

CAPACITANCE; SEMICONDUCTING SILICON COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 66149157326     PISSN: 00318949     EISSN: 14024896     Source Type: Journal    
DOI: 10.1088/0031-8949/79/03/035802     Document Type: Article

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