Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

Solid-State Electronics

Volumn 54, Issue 2, 2010, Pages 178-184

  Put, S ^a,b,c   Mehta, H ^a   Collaert, N ^a   Van Uffelen, M ^c   Leroux, P ^d   Claeys, C ^a,b   Lukyanchikova, N ^e   Simoen, E ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c BELGIAN NUCLEAR RESEARCH CENTRE   (Belgium)

^d Thomas More University College   (Belgium)

^e INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

45 rotated channel; Gate dielectric; Low frequency noise; Selective Epitaxial Growth; SOI MuGFET

Indexed keywords

1/F NOISE; CARRIER NUMBER FLUCTUATION; CHANNEL GATES; CHANNEL ORIENTATIONS; HIGH-K DIELECTRIC; HIGH-K GATE; LOW FREQUENCY; LOW-FREQUENCY NOISE; NOISE BEHAVIOR; SELECTIVE EPITAXIAL GROWTH; TRAP DENSITY;

HAFNIUM COMPOUNDS; ROTATION; SILICON COMPOUNDS; THERMAL NOISE;

EPITAXIAL GROWTH;

EID: 76349122927     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.12.016     Document Type: Article

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