A new model for 1/f noise in high-κ MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 561-564

  Morshed, Tanvir ^a   Devireddy, Siva Prasad ^a   Rahman, M Shahriar ^a   Çelik Butler, Zeynep ^a   Tseng, Hsing Huang ^b   Zlotnicka, Ania ^c   Shanware, Ajit ^d   Green, Keith ^d   Chambers, J J ^d   Visokay, M R ^d   Quevedo Lopez, M A ^d   Colombo, Luigi ^d  

^a University of Texas at Arlington   (United States)

^b SEMATECH   (United States)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; GATES (TRANSISTOR); MOSFET DEVICES; OPTICAL DESIGN;

1 / F NOISE; DOMINANT MECHANISM; FABRICATION PROCESSES; INTERFACIAL LAYER; LOW-FREQUENCY NOISE; MOBILITY FLUCTUATIONS; MOSFETS; MULTI-LAYER STRUCTURES; MULTI-LAYERED; NEW MODEL; PHONON-SCATTERING; SPATIAL DISTRIBUTIONS; TRAP DENSITIES;

GATE DIELECTRICS;

EID: 50249096756     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419000     Document Type: Conference Paper

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