Characterization of mixed-signal properties of MOSFETs with high-κ (SiON/HfSiON/TaN) gate stacks

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1216-1225

  Rittersma, Z M ^a   Vertregt, M ^b   Deweerd, W ^b   van Elshocht, S ^b   Srinivasan, P ^b   Simoen, Eddy ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b IMEC   (Belgium)

Author keywords

1 f noise; Charge trapping; High ; Mixed signal; Mobility; Threshold voltage instability

Indexed keywords

CURRENT DENSITY; DEFECTS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATES (TRANSISTOR); LEAKAGE CURRENTS; OPTIMIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; STOICHIOMETRY; THRESHOLD VOLTAGE; TUNING;

CHARGE TRAPPING; GATE STACKS; MIXED-SIGNAL PROPERTIES;

MOSFET DEVICES;

EID: 33646078317     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872702     Document Type: Article

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