Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 High-κ gate stack observed by using low-frequency charge pumping method

IEEE Transactions on Electron Devices

Volumn 54, Issue 6, 2007, Pages 1330-1337

  Wu, Wei Hao ^a   Tsui, Bing Yue ^b   Chen, Mao Chieh ^a   Hou, Yong Tian ^b   Jin, Yin ^b   Tao, Hun Jan ^b   Chen, Shih Chang ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Border trap; Hafnium oxide; High dielectric; Low frequency charge pumping method; Transient charging effect; Transient discharging effect

Indexed keywords

CHARGE TRAPPING; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS;

BORDER TRAPS; GATE STACK; MESH PROFILING;

HETEROJUNCTIONS;

EID: 34249882743     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.895864     Document Type: Article

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