Investigation of intrinsic gettering for germanium doped Czochralski silicon wafer

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Chen, Jiahe ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Wang, Weiyan ^a   Zeng, Yuheng ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); GERMANIUM; OXYGEN; PRECIPITATION (CHEMICAL); RANDOM ACCESS STORAGE;

BULK MICRODEFECT (BMD); DENUDED ZONES (DZ); GERMANIUM DOPING; OXYGEN PRECIPITATION;

SILICON WAFERS;

EID: 34250622519     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2737779     Document Type: Article

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