Oxygen precipitation in nitrogen-doped Czochralski silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 308-311

  Yang, Deren ^a   Ma, Xiangyang ^a   Fan, Ruixin ^a   Zhang, Jinxin ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; NITROGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

NITROGEN-DOPED CZOCHRALSKI SILICON;

SEMICONDUCTING SILICON;

EID: 0033345573     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00453-6     Document Type: Article

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