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Journal of Crystal Growth

Volumn 226, Issue 1, 2001, Pages 19-30

The impact of nitrogen on the defect aggregation in silicon

(6) Von Ammon, W a Holzl R a Virbulis, J a Dornberger, E a Schmolke, R a Graf D a

a SILTRONIC AG (Germany)

Author keywords

Defect aggregation; Nitrides; Oxides; Point defects; Semiconducting silicon; Single crystal growth

Indexed keywords

AGGLOMERATION; BOUNDARY CONDITIONS; CRYSTAL GROWTH FROM MELT; INTERFACES (MATERIALS); NITROGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STOICHIOMETRY;

DEFECT AGGREGATION; NITROGEN-DOPED FLOATING ZONE CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0035368143 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01277-5 Document Type: Article

Times cited : (102)

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