Role of nitrogen related complexes in the formation of defects in silicon

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2114-2116

  Karoui, A ^a   Karoui, F Sahtout ^a   Kvit, A ^a   Rozgonyi, G A ^a   Yang, D ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASIS; ANNEALED WAFERS; COMPLEX INTERACTION; DEFECT SIZE; DENSITY DISTRIBUTIONS; DENUDED ZONES; NITROGEN-DOPED CZ SILICON; NOMARSKI OPTICAL MICROSCOPY; OXYGEN PRECIPITATES; OXYNITRIDES;

DEFECT DENSITY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; NITRIDES; OPTICAL MICROSCOPY; POINT DEFECTS; PRECIPITATES; SILICON WAFERS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79956036224     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1462874     Document Type: Article

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