Formation of stable N-V-O complexes in Si

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 626-629

  Kageshima, H ^a   Taguchi, A ^a   Wada, K ^b  

^a NTT Basic Research Laboratories   (Japan)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

First principles calculations; Formation energy; N V O complex; Si

Indexed keywords

AGGLOMERATION; APPROXIMATION THEORY; CHEMICAL BONDS; COMPLEXATION; COOLING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; HIGH TEMPERATURE EFFECTS; NUCLEATION; PRECIPITATION (CHEMICAL); REDUCTION; SUPERSATURATION; THERMAL DIFFUSION IN SOLIDS;

ATOMIC CONFIGURATIONS; FIRST-PRINCIPLES CALCULATIONS; FORMATION ENERGY;

SILICON;

EID: 0346504194     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.121     Document Type: Conference Paper

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