Effect of carbon doping on oxygen precipitation behavior in internal gettering processing for Czochralski silicon

Journal of Crystal Growth

Volumn 290, Issue 1, 2006, Pages 61-66

  Chen, Jiahe ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Carbon; A1. Doping; A1. Oxygen; A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

CARBON; OXYGEN; PRECIPITATION (CHEMICAL); SILICON; SINGLE CRYSTALS;

CZOCHRALSKI METHOD; DOPING; SEMICONDUCTING SILICON; SINGLE-CRYSTAL GROWTH;

SEMICONDUCTOR DOPING;

EID: 33645090983     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.029     Document Type: Article

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