Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals

Journal of Crystal Growth

Volumn 250, Issue 3-4, 2003, Pages 359-363

  Yu, Xuegong ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Li, Hong ^a   Shen, Yijun ^a   Tian, Daxi ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Doping; A1. Gettering; B2. Czochralski silicon

Indexed keywords

ANNEALING; DIFFUSION; GETTERS; PRECIPITATION (CHEMICAL); SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SILICON;

INTRINSIC GETTERING (IG);

CRYSTAL GROWTH FROM MELT;

EID: 0037400042     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02487-9     Document Type: Conference Paper

References (18)

1. Ryuta J., Morita E., Tanaka T., Shimanuki Y. Jpn. J. Appl. Phys. 29:1990;L1947.
2. Bender H., Vanhellemont J., Schmolke R. Jpn. J. Appl. Phys. 36:1996;L1217.
3. Moriya K., Ogawa T. Jpn. J. Appl. Phys. 22:1983;307.
4. Aihara K., Takeno H., Hayamizu Y., Tamatsuka M., Masui T. J. Appl. Phys. 88:2000;3705.
5. Huth S., Breitenstein O., Huber A., Lambert U. J. Appl. Phys. 88:2000;4000.
6. Park J.G., Lee G.S., Kwack K.D., Park J.M. Jpn. J. Appl. Phys. 39:2000;197.
7. Rozgonyi G.A., Doysher R.P., Pearce C.W. J. Electrochem. Soc. 123:1976;1910.
8. Richter, Proceedings of the GADEST '85, October 8-18, 1985, Garzau, Germany, p. 1.
9. Kissinger G., Vanhellemont J., Lamnert U.et al. Electrochem. Soc. Proc. 98(1):1998;1095.
10. Yan T., Garden E.E., Tice W.K. Appl. Phys. Lett. 30:1977;175.
11. Sinha P.K., Glaunsinger W.S. J. Mater. Res. 5:1990;1013.
12. Gilles D., Weber E.R. Phys. Rev. Lett. 64:1990;196.
13. Gilles, E.R. Weber, S. Hahn, O.R. Monteiro, K.H. Cho, in: Huff, H.R., Barraclough, K.G., Chikawa, J.J. (Eds.), Semiconducteur Silicon, Electrochem. Soc., PV 90-7, Pennington (1990).
14. Yang D., Yu X., Ma X., Li L., Que D. J. Crystal Growth. 243:2002;371.
15. Ruitz H.J., Pollack G.P. J. Electrochem. Soc. 125:1978;128.
16. Ruitz H.J., Pollack G.P. J. Electrochem. Soc. 125:1978;128.
17. Kaiser W., Frisch H.L., Reiss H. Phys. Rev. 112:1958;1546.
18. Londos C.A., Binns M.J., Brown A.R., AmcQuaid S., Newman R.C. Appl. Phys. Lett. 62:1993;1525.