A fundamental model proposed for material removal in chemical-mechanical polishing

Wear

Volumn 268, Issue 5-6, 2010, Pages 837-844

  Xin, J ^a   Cai, W ^a   Tichy, J A ^b  

^a UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Chemical mechanical polishing (CMP); Mechanism of material removal; Non Newtonian slurry flow

Indexed keywords

CHEMICAL-MECHANICAL POLISHING (CMP); CMP PROCESS; DETAILED MODELING; FUNDAMENTAL MODELS; IN-BETWEEN; MATERIAL REMOVAL; MATERIAL REMOVAL RATE; MATHEMATICAL FORMULATION; MECHANICAL ABRASION; NON-NEWTONIAN SLURRIES; NONUNIFORM; PATTERNED WAFERS; WAFER SURFACE;

CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; GRAFTING (CHEMICAL); MATERIALS; MECHANISMS; NANOTECHNOLOGY; NON NEWTONIAN FLOW; PIPE FLOW; POLISHING; SURFACE REACTIONS; SYNTHESIS (CHEMICAL);

SURFACES;

EID: 74649083854     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.wear.2009.12.005     Document Type: Article

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