Material removal regions in chemical mechanical planarization for submicron integrated circuit fabrication: Coupling effects of slurry chemicals, abrasive size distribution, and wafer-pad contact area

IEEE Transactions on Semiconductor Manufacturing

Volumn 16, Issue 1, 2003, Pages 45-56

  Luo, Jianfeng ^a   Dornfeld, David A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Abrasive size distribution; Abrasive weight concentration; Bilayer property of passive film; Chemical mechanical planarization polishing (CMP); Film generation rate; Wafer pad contact area

Indexed keywords

ABRASIVES; ALUMINUM; CHEMICAL MECHANICAL POLISHING; COPPER; SILICON WAFERS; TUNGSTEN;

ABRASIVE SIZE DISTRIBUTION; ABRASIVE WEIGHT CONCENTRATION; MATERIAL REMOVAL RATE MODELS; PASSIVE FILM;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0037326127     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2002.807739     Document Type: Article

References (37)

1. J. Luo and D. A. Dornfeld, "Material removal mechanism in chemical mechanical polishing: Theory and modeling," IEEE Trans. Semiconduct. Manuf., vol. 14, pp. 112-133, May 2001.
2. ____, "Effects of abrasive size distribution in chemical-mechanical planarization for sub-micron integrated circuit fabrication," IEEE Trans. Semiconduct. Manuf., submitted for publication.
3. M. Bielmann, U. Mahajan, and R. K. Singh, "Effect of particle size during tungsten chemical mechanical polishing," Electrochemical Solid-State Lett., vol. 2, pp. 401-403, 1999.
4. R. Jairath, M. Desai, M. Stell, R. Tolles, and D. Scherber-Brewer, "Consumables for the chemical mechanical polishing (CMP) of dielectrics and conductors," in Materials Res. Soc. Symp. Proc., vol. 337, 1994, pp. 121-131.
5. Q. Luo, S. Ramarajan, and S. V. Babu, "Modification of the preston equation for the chemical-mechanical polishing of copper," Thin Solid Films, vol. 335, pp. 160-167, 1998.
6. D. Devlieger, M. Desai, and C. Fruitman, "Sol gel abrasives in chemical mechanical polish," in Advanced Metallization ULSI Applications in 1994, Conf. Proc. ULSI-X, 1995 Material Res. Soc., 1995, pp. 201-205.
7. D. J. Stein, D. L. Hetherington, and J. L. Cecchi, "Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodated-based slurries - I. Role of alumina and potassium iodate," J. Electrochemical Soc., vol. 146, no. 1, pp. 376-381, 1999.
8. F. M. Doyle and S. Aksu, "Copper CMP: Electrochemistry in slurries containing organic complexing agents," presented at the Small Feature Reproducibility (SFR) Weekly Meeting, Berkeley, CA, Feb. 26, 2001.
9. 2 thin films: The role of consumables," J. Electrochemical Soc., vol. 146, no. 12, pp. 4647-4653, 1999.
10. F. B. Kaufman, D. B. Thompson, R. E. Broadie, M. A. Jaso, W. L. Guthrie, D. J. Guthrie, D. J. Pearson, and M. B. Small, "Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects," J. Electrochemical Soc., vol. 138, no. 11, pp. 3460-3465, 1991.
11. Y. Moon, "Mechanical aspects of the material removal mechanism in chemical mechanical polishing (CMP)," Ph.D. dissertation, Dept. Mechanical Eng., Univ. California, Berkeley, CA, 1999.
12. S. Mischler, S. Debaud, and D. Landolt, "Wear-accelerated corrosion of passive metals in tribocorrosion systems," J. Electrochem. Soc., vol. 145, no. 3, pp. 750-758, 1998.
13. I. Garcia, D. Dress, and J. P. Celis, "Corrosion-wear of passivating materials in sliding contacts based on a concept of active wear track area," Wear, vol. 249, pp. 452-460, 2001.
14. J. M. Steigerwald, S. P. Murarka, D. J. Duquette, and R. J. Gutmann, "Surface layer formation during the chemical mechanical polishing of copper thin films," in Materials Res. Soc. Symp. Proc., vol. 337, 1994, pp. 133-138.
15. M. A. Fury, D. L. Scherber, and M. A. Stell, "Chemical mechanical planarization of aluminum based alloy for multilevel metallization," Materials Res. Soc. Bull., vol. 20, pp. 61-64, Nov. 1995.
16. J. A. Trogolo and K. Rajan, "Near surface modification of silica structure induced by chemical/mechanical polishing," J. Materials Sci., vol. 29, pp. 4554-4558, 1994.
17. E. I. Hwang and D. A. Dornfeld, "Scratch testing of silicon wafers for surface characterization," presented at the Small feature reproducibility (SFR) Annual Workshop, Berkeley, CA, Nov. 8, 2000.
18. L. M. Cook, "Chemical processes in glass polishing," J. Non-Crystalline Solids, vol. 120, pp. 152-171, 1990.
19. R. Carpio, J. Farkas, and R. Jairath, "Initial study on copper CMP slurry chemistries," Thin Solid Films, vol. 266, pp. 238-244, 1995.
20. D. D. Macdonald and M. Urquidi-Macdonald, "Theory of steady-state passive films," J. Electrochem. Soc., vol. 137, no. 8, pp. 2395-2402, 1990.
21. J. Hernandez, P. Wrschka, and G. S. Oehrlein, "Surface chemistry studies of copper chemical mechanical planarization," J. Electrochem. Soc., vol. 148, no. 7, pp. G389-G397, 2001.
22. F. C. M. J. M. Van Delft, P. Lasiński, and G. S. A. M. Theunisse, "Plasma etch mechanistic framework used for tribochemical reactions," J. Materials Sci. Lett., vol. 13, pp. 1370-1374, 1994.
23. J. Luo and D. A. Dornfeld, "Optimization of chemical mechanical planarization from the viewpoint of consumable effects," in 18th Int. IEEE VLSI Multilevel Interconnection Conf. (VMIC), Santa Clara, CA, Sept. 25-26, 2001, pp. 281-289.
24. D. O. Ouma, "Modeling of chemical mechanical polishing for dielectric planarization," Ph.D. dissertation, Dept. Electrical Eng., MIT, Cambridge, MA, 1999.
25. K. L. Johnson, Contact Mechanics. Cambridge, U.K.: Cambridge Univ. Press, 1985.
26. J. F. Shackelford, W. Alexander, and J. S. Park, CRC Material Science and Engineering Handbook. New York: CRC, 1994.
27. A. J. Clark, K. B. Witt, and R. L. Rhoades, "Oxide removal rate interactions between slurry, pad, down force, and conditioning," in Fourth Int. Conf. Chemical-Mechanical Polish (CMP) Planarization for ULSI Multilevel Interconnection (CMP-MIC), Santa Clara, CA, Feb. 11-12, 1999, pp. 401-404.
28. S. Ramarajan and S. V. Babu, "Modified preston equation-revisited," in Materials Res. Soc. Symp. Proc.: Chemical-Mechanical Polishing - Fundamentals and Challenges, vol. 556, 2000, pp. 149-154.
29. 2 films," Thin Solid Films, vol. 270, pp. 601-606, 1995.
30. J. Luo, D. A. Dornfeld, Z. Mao, and E. Hwang, "Integrated model for chemical mechanical planarization based on a developed material removal model," in Sixth Int. Conf. Chemical-Mechanical Polish (CMP) Planarization for ULSI Multilevel Interconnection (CMP-MIC), Santa Clara, CA, Mar. 7-9, 2001, pp. 25-32.
31. G. Fu, A. Chandra, S. Guha, and G. Subhash, "A plasticity-based model of material removal in chemical-mechanical polishing (CMP)," IEEE Trans. Semiconduct. Manuf., vol. 14, pp. 406-417, Nov. 2001.
32. E. Paul, "A model of chemical mechanical polishing," J. Electrochem. Soc., vol. 148, no. 6, pp. G355-G358, 2001.
33. ____, "Application of a CMP model to tungsten CMP," J. Electrochem. Soc., vol. 148, no. 6, pp. G359-G363, 2001.
34. A. Jindal, S. Hegde, and S. V. Babu, "Evaluation of alumina/silica mixed abrasive slurries for chemical mechanical polishing of copper and tantalum," in Eighteenth Int. IEEE VLSI Multilevel Interconnection Conf. (VMIC), Santa Clara, CA, Sept. 25-26, 2001, pp. 297-306.
35. G. Ahmadi and X. Xia, "A model for mechanical wear and abrasive particle adhesion during the chemical mechanical polishing process," J. Electrochem. Soc., vol. 148, no. 3, pp. G99-G109, 2001.
36. Y. Zhao and L. C. Chang, "A micro-contact and wear model for chemical-mechanical polishing of silicon wafers," Wear, vol. 252, no. 3-4, pp. 220-226, Feb. 2002.
37. R. J. Gutmann, "Copper damascene patterning: Challenges for chemical-mechanical planarization," in Seminar Dept. of Mechanical Eng., Berkeley, CA, Feb. 15, 2002.