Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

Journal of Crystal Growth

Volumn 312, Issue 5, 2010, Pages 724-729

  Adhikary, S ^a   Halder, N ^a   Chakrabarti, S ^a   Majumdar, S ^b   Ray, S K ^b   Herrera, M ^c   Bonds, M ^c   Browning, N D ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

^c University of California Davis   (United States)

Author keywords

A1. Nanostructure; A3.Molecular beam epitaxy; A3.Quantum dots; B2.Semiconducting III V materials

Indexed keywords

A1. NANOSTRUCTURE; B2.SEMICONDUCTING III-V MATERIALS; CAPPING LAYER; CAPPING THICKNESS; COMPRESSIVE STRAIN; DEFECT-FREE; GAAS; HETEROSTRUCTURES; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; INALGAAS; INAS; INAS/GAAS; LOW TEMPERATURES; OPTICAL EMISSIONS; PHONON FREQUENCIES; QUANTUM DOT; QUANTUM DOTS; RAMAN STUDIES; ROCKING CURVES; SATELLITE PEAKS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SELF ASSEMBLED MULTILAYERS; SELF-ASSEMBLED; SEMI CONDUCTING III-V MATERIALS; STRAIN INTERACTIONS;

CRYSTAL GROWTH; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MULTILAYERS; NANOSTRUCTURES; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WIRES; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 74549154620     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.067     Document Type: Article

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