Low-bias, high-temperature operation of an InAs-InGaAs quantum-dot infrared photodetector with peak-detection wavelength of 11.7 μm

Infrared Physics and Technology

Volumn 52, Issue 1, 2009, Pages 22-24

  Vaillancourt, Jarrod ^a   Stintz, Andreas ^b   Meisner, Mark J ^c   Lu, Xuejun ^a  

^a University of Massachusetts   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

High operating temperature; Large photoresponsivity; Longwave infrared (LWIR) sensing and imaging; Low bias; Quantum dot infrared photodetector

Indexed keywords

INDIUM ARSENIDE; INFRARED DETECTORS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR QUANTUM DOTS;

HIGH OPERATING TEMPERATURE; LARGE PHOTORESPONSIVITY; LONGWAVE-INFRARED (LWIR) SENSING AND IMAGING; LOW-BIAS; QUANTUM-DOT INFRARED PHOTODETECTOR;

SEMICONDUCTING INDIUM;

EID: 58349110976     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2008.10.002     Document Type: Article

References (18)

1. Mooney J.M., Vickers V.E., An M., and Brodzik A.K. High-throughput hyperspectral infrared camera. J. Opt. Soc. Am. A 14 (1997) 2951
2. Reago D.A., Horn S., Campbell J., and Vollmerhausen R. Third generation imaging sensor system concept. Proc. SPIE 3701 (1999) 108
3. Rogalski A. Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays. Infrared Phys. Technol. 40 (1999) 279
4. Petersen P.E. Auger recombination in mercury cadmium telluride. In: Willardson R.K., and Beer A.C. (Eds). Semiconductors and Semimetals vol. 18 (1981), Academic 121-155 (Chapter 4)
5. Stiff A., Krishna S., Bhattacharya P., and Kennerly S. High-detectivity normal-incidence, midinfrared (4 μm) InAs/GaAs quantum dot detector operating at 150 K. Appl. Phys. Lett. 79 (2001) 421
6. Pan D., Towe E., and Kennerly S. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors. Appl. Phys. Lett. 73 (2003) 1937
7. Liu H.C. Quantum dot infrared photodetector. Opto-Electron. Rev. 11 (2003) 1
8. Kim E.-T., Madhukar A., Ye Z., and Campbell J.C. High detectivity InAs quantum-dot infrared photodetectors. Appl. Phys. Lett. 84 (2004) 3277
9. Bhattacharya P., Su X.H., Chakrabarti S., Ariyawansa G., and Perera A.G.U. Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature. Appl. Phys. Lett. 86 (2005) 191106
10. Bockelmann U., and Bastard G. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases. Phys. Rev. B 42 (1990) 8947
11. Lu X., Meisner M.J., Vaillancourt J., Li J., Qian X., and Goodhue W.D. Modulation-doped InAs-InGaAs quantum dot longwave infrared photodetector with high quantum efficiency. IEE Electron. Lett. 43 (2007) 589
12. Ye Z., Campbell J.C., Chen Z., Kim E.-T., and Madhukar A. Noise and photoconductive gain in InAs quantum-dot infrared photodetectors. Appl. Phys. Lett. 83 (2003) 1234
13. Stiff-Roberts A.D., Krishna S., Bhattacharya P., and Kennerly S. Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier. J. Vac. Sci. Technol. B 20 (2002) 1185
14. Chakrabarti S., Stiff-Roberts A.D., Bhattacharya P., Gunapala S., Bandara S., Rafol S.B., and Kennerly S.W. High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity. IEEE Photon. Technol. Lett. 16 (2004) 1361
15. Tang S., Chiang C., Weng P., Gau Y., Luo J., Yang S., Shih C., Lin S., and Lee S. High-temperature operation normal incident 256 × 256 InAs-GaAs quantum-dot infrared photodetector focal plane array. IEEE Photon. Technol. Lett. 18 (2006) 986
16. Phillips J., Kamath K., and Bhattacharya P. Far-infrared photoconductivity in self-organized InAs quantum dots. Appl. Phys. Lett. 72 (1998) 2020
17. Bhattacharya P., Su X.H., Chakrabarti S., Ariyawansa G., and Perera A.G.U. Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature. Appl. Phys. Lett. 86 (2005) 191106-191108
18. Lu X., Vaillancourt J., and Meisner M.J. Temperature-dependent photoresponsivity and high-temperature (190 K) operation of a quantum dot infrared photodetector. Appl. Phys. Lett. 91 (2007) 051115