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Journal of Crystal Growth

Volumn 244, Issue 1, 2002, Pages 39-48

Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures

(6) Joyce, P B a Krzyzewski, T J a Steans, P H a Bell, G R a Neave, J H a Jones, T S a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

A1. Surface processes; A3. Molecular beam epitaxy; A3. Quantum dots; B1. Arsenates; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; THICKNESS MEASUREMENT;

BILAYER STRUCTURES;

MOLECULAR BEAM EPITAXY;

EID: 0036723154 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01607-X Document Type: Article

Times cited : (26)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.