Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 364-369

  Huang, Xiu Qi ^a   Liu, Feng Qi ^a   Che, Xiao Ling ^a   Liu, Jun Qi ^a   Lei, Wen ^a   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Nanostructures; A1. Transmission electron microscopy; A1. X ray diffraction; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting III V materials

Indexed keywords

DEPOSITION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DOUBLE-CRYSTAL X-RAY DIFFRACTION (DCXRD); GROWTH CONDITIONS; MECHANICAL POLISHING; SEMICONDUCTING III-V MATERIALS;

INDIUM COMPOUNDS;

EID: 4544269201     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.004     Document Type: Article

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