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Volumn 259, Issue 3, 2003, Pages 252-256
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Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer
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Author keywords
A1. Growth conditions; A1. Quantum dots; A1. Strained layer
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Indexed keywords
CRYSTAL GROWTH;
SELF ASSEMBLY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
GROWTH CONDITIONS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0142063396
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2003.07.018 Document Type: Article |
Times cited : (34)
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References (14)
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