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Volumn 259, Issue 3, 2003, Pages 252-256

Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer

Author keywords

A1. Growth conditions; A1. Quantum dots; A1. Strained layer

Indexed keywords

CRYSTAL GROWTH; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0142063396     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.07.018     Document Type: Article
Times cited : (34)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.