Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots

Physica Status Solidi (A) Applied Research

Volumn 190, Issue 2, 2002, Pages 577-581

  Gurioli, M ^a,c   Sanguinetti, S ^a   Lozzia, S ^b   Grilli, E ^a   Guzzi, M ^b   Frigeri, P ^a   Franchi, S ^b   Colocci, M ^a   Vinattieri, A ^b   Taddei, S ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF FLORENCE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ELECTRONS; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ATOMIC LAYER MOLECULAR BEAM EPITAXY; CARRIER DYNAMICS; DECAY DYNAMICS; ELECTRONIC COUPLING EFFECTS; OPTICAL TRANSITION; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036544011     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200204)190:2<577::AID-PSSA577>3.0.CO;2-X     Document Type: Conference Paper

References (5)