Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction

Russian Microelectronics

Volumn 31, Issue 5, 2002, Pages 310-317

  Pashaev, E M ^a   Yakunin, S N ^b   Zaitsev, A A ^b   Mokerov, V G ^c   Fedorov, Yu V ^c   Imamov, R M ^a  

^a SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

^b MIREA RUSSIAN TECHNOLOGICAL UNIVERSITY   (Russian Federation)

^c INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345755738     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1020291009521     Document Type: Article

References (34)

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